Inventor profile of:

Ching-tzu CHEN

City:

Ossining, New York

Country:

United States

Published Applications:

44

Last publication date:

2026-05-14

Top Assignees for applications by Ching-tzu CHEN

The entities that hold a legal rights for patent applications filed by inventor CHEN Ching-tzu:

Recent patent applications by CHEN Ching-tzu

Ching-tzu CHEN from Ossining, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-05-14
US20260136571A1
Electricity

STACKED FET P-N DIODE

#2 | 2026-03-26
US20260090291A1
Electricity

TWO-TERMINAL MIXED-IONIC-ELECTRONIC-CONDUCTION RANDOM ACCESS MEMORY (MIECRAM) DEVICE

#3 | 2026-02-26
US20260059858A1
Electricity

SEED STRUCTURES IN SEMICONDUCTOR DEVICES AND FABRICATION THEREOF

#4 | 2026-02-12
US20260047411A1
Electricity

DAMASCENE INTERCONNECTS WITH BILAYER LINER

#5 | 2026-02-12
US20260047133A1
Electricity

STACKED FET WITH METALLIC SOURCE/DRAIN CONTACT

#6 | 2025-10-02
US20250309099A1
Electricity

DIRECTIONAL CONDUCTOR INTERCONNECT WITH EMBEDDED VIA

#7 | 2025-09-25
US20250300078A1
Electricity

HYBRID INTERCONNECT STRUCTURE WITH TOPOLOGICAL CONDUCTOR INTERFACE LAYER

#8 | 2025-08-28
US20250273562A1
Electricity

ULTRAFAST TRANSPORT INTERCONNECTS

#9 | 2025-06-19
US20250204283A1
Electricity

LOW-VARIABILITY, HIGH-DENSITY DISC CELL WITH HORIZONTALLY ALIGNED ELECTRODES

#10 | 2025-06-19
US20250203878A1
Electricity

ELECTROFORMED ENERGY-EFFICIENT PHASE CHANGE MEMORY DEVICE WITH THIN ACTIVE REGION

#11 | 2025-06-05
US20250185525A1
Electricity

PHASE-CHANGE MEMORY CELL WITH SIDEWALL OUTER CONTACT

#12 | 2025-06-05
US20250185258A1
Electricity

PHASE CHANGE MEMORY WITH PARTIAL SIDEWALL SPACER CONTACT

#13 | 2025-03-13
US20250085331A1
Physics

CARRIER-RESOLVED HALL MEASUREMENT WITH MULTI-HARMONIC MAGNETORESISTANCE ANALYSIS

#14 | 2025-03-06
US20250081863A1
Electricity

STRUCTURE TO REGULATE MULTI-FILAMENT FORMATION ON MEMORY STRUCTURE

#15 | 2025-01-02
US20250008848A1
Electricity

LOW DRIFT PHASE CHANGE MATERIAL COMPOSITE MATRIX

#16 | 2024-09-26
US20240324468A1
Electricity

SPIN-ORBIT TORQUE MEMORY DEVICES

#17 | 2024-07-11
US20240237544A1
Electricity

VERTICAL MAGNETIC TUNNEL JUNCTION DEVICE

#18 | 2024-06-06
US20240188455A1
Electricity

Proximity heater to lower RRAM forming voltage

#19 | 2024-04-18
US20240130243A1
Electricity

MAGNETIC TUNNEL JUNCTION DEVICE

#20 | 2024-04-04
US20240113024A1
Electricity

MULTI-LAYER TOPOLOGICAL INTERCONNECT WITH PROXIMAL DOPING LAYER

#21 | 2024-03-28
US20240107900A1
Electricity

PHASE CHANGE MEMORY CELL SIDEWALL HEATER

#22 | 2024-03-07
US20240081159A1
Electricity

PHASE CHANGE MULTILAYER HETEROSTRUCTURE WITH MULTIPLE HEATERS

#23 | 2024-02-29
US20240074336A1
Electricity

SELF-ALIGNED PATTERNED PROJECTION LINER FOR SIDEWALL ELECTRODE PCM

#24 | 2024-01-04
US20240008374A1
Electricity

VERTICAL ULTRA-THIN PCM CELL

#25 | 2023-11-09
US20230361038A1
Electricity

TOPOLOGICAL SEMI-METAL INTERCONNECTS

#26 | 2023-09-28
US20230309425A1
Electricity

LATERAL PHASE CHANGE MEMORY CELL

#27 | 2023-09-21
US20230301207A1
Electricity

Phase change memory with multi-level programming

#28 | 2023-09-07
US20230284541A1
Electricity

Phase change memory cell with double active volume

#29 | 2023-06-15
US20230189667A1
Electricity

MULTI-LEVEL PROGRAMMING OF PHASE CHANGE MEMORY DEVICE

#30 | 2022-08-11
US20220254995A1
Electricity

Embedded heater in a phase change memory material

#31 | 2022-05-19
US20220157733A1
Electricity

Topological semi-metal interconnects

#32 | 2021-08-12
US20210248072A1
Physics

Optimized hierarchical scratchpads for enhanced artificial intelligence accelerator core utilization

#33 | 2019-12-12
US20190378973A1
Electricity

Heusler-alloy and ferrimagnet based magnetic domain-wall devices for artificial neural network applications

#34 | 2017-09-21
US20170271602A1
Electricity

Thin film device with protective layer

#35 | 2017-05-25
US20170148875A1
Electricity

Two-dimensional array of four-terminal thin film devices with surface-sensitive conductor layer and method of fabricating the same

#36 | 2017-03-21
US15183172
Electricity

Fabricating two-dimensional array of four-terminal thin film devices with surface-sensitive conductor layer

#37 | 2016-12-01
US20160351840A1
Electricity

Thin film device with protective layer

#38 | 2016-12-01
US20160351679A1
Electricity

Thin film device with protective layer

#39 | 2016-08-02
US14941878
Electricity

Fabricating two-dimensional array of four-terminal thin film devices with surface-sensitive conductor layer

#40 | 2016-06-16
US20160172507A1
Electricity

Thin film device with protective layer

#41 | 2014-06-05
US20140151771A1
Electricity

THIN FILM DEPOSITION AND LOGIC DEVICE

#42 | 2014-06-05
US20140151770A1
Electricity

THIN FILM DEPOSITION AND LOGIC DEVICE

#43 | 2013-12-12
US20130330885A1
Electricity

Side-gate defined tunable nanoconstriction in double-gated graphene multilayers

#44 | 2013-12-12
US20130328017A1
Electricity

Side-gate defined tunable nanoconstriction in double-gated graphene multilayers

InventorID:

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