Ossining, New York
United States
44
2026-05-14
The entities that hold a legal rights for patent applications filed by inventor CHEN Ching-tzu:
Ching-tzu CHEN from Ossining, US has applied for patents for these inventions. The list has both pending applications and granted patents:
STACKED FET P-N DIODE
#2 | 2026-03-26TWO-TERMINAL MIXED-IONIC-ELECTRONIC-CONDUCTION RANDOM ACCESS MEMORY (MIECRAM) DEVICE
#3 | 2026-02-26SEED STRUCTURES IN SEMICONDUCTOR DEVICES AND FABRICATION THEREOF
#4 | 2026-02-12DAMASCENE INTERCONNECTS WITH BILAYER LINER
#5 | 2026-02-12STACKED FET WITH METALLIC SOURCE/DRAIN CONTACT
#6 | 2025-10-02DIRECTIONAL CONDUCTOR INTERCONNECT WITH EMBEDDED VIA
#7 | 2025-09-25HYBRID INTERCONNECT STRUCTURE WITH TOPOLOGICAL CONDUCTOR INTERFACE LAYER
#8 | 2025-08-28ULTRAFAST TRANSPORT INTERCONNECTS
#9 | 2025-06-19LOW-VARIABILITY, HIGH-DENSITY DISC CELL WITH HORIZONTALLY ALIGNED ELECTRODES
#10 | 2025-06-19ELECTROFORMED ENERGY-EFFICIENT PHASE CHANGE MEMORY DEVICE WITH THIN ACTIVE REGION
#11 | 2025-06-05PHASE-CHANGE MEMORY CELL WITH SIDEWALL OUTER CONTACT
#12 | 2025-06-05PHASE CHANGE MEMORY WITH PARTIAL SIDEWALL SPACER CONTACT
#13 | 2025-03-13CARRIER-RESOLVED HALL MEASUREMENT WITH MULTI-HARMONIC MAGNETORESISTANCE ANALYSIS
#14 | 2025-03-06STRUCTURE TO REGULATE MULTI-FILAMENT FORMATION ON MEMORY STRUCTURE
#15 | 2025-01-02LOW DRIFT PHASE CHANGE MATERIAL COMPOSITE MATRIX
#16 | 2024-09-26SPIN-ORBIT TORQUE MEMORY DEVICES
#17 | 2024-07-11VERTICAL MAGNETIC TUNNEL JUNCTION DEVICE
#18 | 2024-06-06Proximity heater to lower RRAM forming voltage
#19 | 2024-04-18MAGNETIC TUNNEL JUNCTION DEVICE
#20 | 2024-04-04MULTI-LAYER TOPOLOGICAL INTERCONNECT WITH PROXIMAL DOPING LAYER
#21 | 2024-03-28PHASE CHANGE MEMORY CELL SIDEWALL HEATER
#22 | 2024-03-07PHASE CHANGE MULTILAYER HETEROSTRUCTURE WITH MULTIPLE HEATERS
#23 | 2024-02-29SELF-ALIGNED PATTERNED PROJECTION LINER FOR SIDEWALL ELECTRODE PCM
#24 | 2024-01-04VERTICAL ULTRA-THIN PCM CELL
#25 | 2023-11-09TOPOLOGICAL SEMI-METAL INTERCONNECTS
#26 | 2023-09-28LATERAL PHASE CHANGE MEMORY CELL
#27 | 2023-09-21Phase change memory with multi-level programming
#28 | 2023-09-07Phase change memory cell with double active volume
#29 | 2023-06-15MULTI-LEVEL PROGRAMMING OF PHASE CHANGE MEMORY DEVICE
#30 | 2022-08-11Embedded heater in a phase change memory material
#31 | 2022-05-19Topological semi-metal interconnects
#32 | 2021-08-12Optimized hierarchical scratchpads for enhanced artificial intelligence accelerator core utilization
#33 | 2019-12-12Heusler-alloy and ferrimagnet based magnetic domain-wall devices for artificial neural network applications
#34 | 2017-09-21Thin film device with protective layer
#35 | 2017-05-25Two-dimensional array of four-terminal thin film devices with surface-sensitive conductor layer and method of fabricating the same
#36 | 2017-03-21Fabricating two-dimensional array of four-terminal thin film devices with surface-sensitive conductor layer
#37 | 2016-12-01Thin film device with protective layer
#38 | 2016-12-01Thin film device with protective layer
#39 | 2016-08-02Fabricating two-dimensional array of four-terminal thin film devices with surface-sensitive conductor layer
#40 | 2016-06-16Thin film device with protective layer
#41 | 2014-06-05THIN FILM DEPOSITION AND LOGIC DEVICE
#42 | 2014-06-05THIN FILM DEPOSITION AND LOGIC DEVICE
#43 | 2013-12-12Side-gate defined tunable nanoconstriction in double-gated graphene multilayers
#44 | 2013-12-12Side-gate defined tunable nanoconstriction in double-gated graphene multilayers
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