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Inventor profile of:

Thomas HOFF

City:

Hillsboro, Oregon

Country:

United States

Published Applications:

6

Last publication date:

2024-06-27

Recent patent applications by HOFF Thomas

Thomas HOFF from Hillsboro, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-06-27
US20240213140A1
Electricity

INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH

#2 | 2024-06-27
US20240213118A1
Electricity

GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS

#3 | 2023-03-23
US20230090106A1
Electricity

GALLIUM NITRIDE (GAN) LAYER TRANSFER FOR INTEGRATED CIRCUIT TECHNOLOGY

#4 | 2023-03-02
US20230069054A1
Electricity

GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH MULTI-LAYER EPITAXY AND LAYER TRANSFER

#5 | 2023-03-02
US20230066336A1
Electricity

GALLIUM NITRIDE (GAN) EPITAXY ON PATTERNED SUBSTRATE FOR INTEGRATED CIRCUIT TECHNOLOGY

#6 | 2023-02-23
US20230054719A1
Electricity

GALLIUM NITRIDE (GAN) LAYER TRANSFER AND REGROWTH FOR INTEGRATED CIRCUIT TECHNOLOGY

InventorID:

5664342 ⎘

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