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Inventor profile of:

Ding Wang

City:

Ann Arbor, Michigan

Country:

United States

Published Applications:

9

Last publication date:

2026-02-19

Recent patent applications by Wang Ding

Ding Wang from Ann Arbor, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-02-19
US20260052717A1
Electricity

YTTRIUM-Doped III-Nitride Semiconductor Devices

#2 | 2025-10-30
US20250338534A1
Electricity

FERROELECTRIC QUATERNARY III-NITRIDE ALLOY-BASED DEVICES

#3 | 2025-07-10
US20250227949A1
Electricity

HETEROSTRUCTURES WITH NANOSTRUCTURES OF LAYERED MATERIAL

#4 | 2025-05-22
US20250169097A1
Electricity

EPITAXIAL NITRIDE FERROELECTRONIC DEVICES

#5 | 2025-05-08
US20250149334A1
Electricity

LATTICE POLARITY CONTROL IN III-NITRIDE SEMICONDUCTOR HETEROSTRUCTURES

#6 | 2024-12-26
US20240429306A1
Electricity

SEMICONDUCTOR HETEROSTRUCTURES WITH QUATERNARY III-NITRIDE ALLOY

#7 | 2024-11-28
US20240395921A1
Electricity

SEMICONDUCTOR HETEROSTRUCTURES WITH SCANDIUM III-NITRIDE LAYER

#8 | 2024-07-18
US20240242963A1
Electricity

EPITAXIAL NITRIDE FERROELECTRONICS

#9 | 2023-03-09
US20230070465A1
Electricity

EPITAXIAL GALLIUM NITRIDE ALLOY FERROELECTRONICS

InventorID:

5677120 ⎘

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