Inventor profile of:

Insik Jin

City:

Eagan, Minnesota

Country:

United States

Published Applications:

65

Last publication date:

2014-01-16

Top Assignees for applications by Insik Jin

The entities that hold a legal rights for patent applications filed by inventor Jin Insik:

Recent patent applications by Jin Insik

Insik Jin from Eagan, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2014-01-16
US20140015075A1
Electricity

Magnetic memory with separate read and write paths

#2 | 2013-12-12
US20130330901A1
Electricity

Programmable metallization memory cell with layered solid electrolyte structure

#3 | 2012-10-04
US20120250405A1
Physics

Magnetic field assisted stram cells

#4 | 2012-08-09
US20120199936A1
Electricity

Schottky diode switch and memory units containing the same

#5 | 2012-06-14
US20120149183A1
Electricity

Schottky diode switch and memory units containing the same

#6 | 2012-02-16
US20120040496A1
Electricity

Method of forming a programmable metallization memory cell

#7 | 2012-02-16
US20120039112A1
Human necessities

Hierarchical cross-point array of non-volatile memory

#8 | 2012-02-09
US20120032131A1
Electricity

Programmable resistive memory cell with oxide layer

#9 | 2011-12-08
US20110300687A1
Electricity

Nano-dimensional non-volatile memory cells

#10 | 2011-10-20
US20110254113A1
Electricity

ST-RAM magnetic element configurations to reduce switching current

#11 | 2011-09-22
US20110228599A1
Physics

Non-volatile memory cell with programmable unipolar switching element

#12 | 2011-08-18
US20110199832A1
Electricity

Magnetic floating gate memory

#13 | 2011-08-11
US20110193148A1
Electricity

Magnet-assisted transistor devices

#14 | 2011-08-04
US20110188293A1
Physics

Non-volatile memory cell with non-ohmic selection layer

#15 | 2011-07-28
US20110182106A1
Physics

Current cancellation for non-volatile memory

#16 | 2011-07-28
US20110180888A1
Physics

Magnetic stack design

#17 | 2011-05-26
US20110122678A1
Electricity

Anti-parallel diode structure and method of fabrication

#18 | 2011-05-26
US20110121256A1
Physics

Programmable resistive memory cell with filament placement structure

#19 | 2011-05-19
US20110117717A1
Physics

Programmable resistive memory cell with filament placement structure

#20 | 2011-04-21
US20110089509A1
Electricity

Magnetic memory with separate read and write paths

#21 | 2011-01-13
US20110007581A1
Physics

Current cancellation for non-volatile memory

#22 | 2011-01-13
US20110007551A1
Physics

Non-volatile memory cell with non-ohmic selection layer

#23 | 2011-01-13
US20110007548A1
Physics

Hierarchical cross-point array of non-volatile memory

#24 | 2011-01-13
US20110007546A1
Electricity

Anti-parallel diode structure and method of fabrication

#25 | 2011-01-13
US20110007545A1
Physics

Non-volatile memory cell stack with dual resistive elements

#26 | 2011-01-13
US20110007544A1
Physics

Non-volatile memory with active ionic interface region

#27 | 2011-01-13
US20110006276A1
Electricity

Schottky diode switch and memory units containing the same

#28 | 2011-01-06
US20110002161A1
Physics

PHASE CHANGE MEMORY CELL WITH SELECTING ELEMENT

#29 | 2010-11-04
US20100277969A1
Physics

Structures for resistive random access memory cells

#30 | 2010-09-02
US20100220512A1
Physics

PROGRAMMABLE POWER SOURCE USING ARRAY OF RESISTIVE SENSE MEMORY CELLS

#31 | 2010-08-19
US20100207219A1
Electricity

Single line MRAM

#32 | 2010-08-05
US20100193761A1
Electricity

Programmable metallization memory cell with layered solid electrolyte structure

#33 | 2010-07-22
US20100182837A1
Electricity

Magnetic floating gate memory

#34 | 2010-06-03
US20100135061A1
Physics

Non-Volatile Memory Cell with Ferroelectric Layer Configurations

#35 | 2010-05-20
US20100124352A1
Electricity

MICRO MAGNETIC DEVICE WITH MAGNETIC SPRING

#36 | 2010-05-20
US20100124106A1
Physics

Magnetic memory with magnetic tunnel junction cell sets

#37 | 2010-05-20
US20100123542A1
Electricity

Non-volatile memory cells including small volume electrical contact regions

#38 | 2010-05-20
US20100123210A1
Electricity

Asymmetric barrier diode

#39 | 2010-05-13
US20100117051A1
Electricity

Memory cells including nanoporous layers containing conductive material

#40 | 2010-05-06
US20100110765A1
Physics

Non-volatile memory cell with programmable unipolar switching element

#41 | 2010-05-06
US20100110764A1
Electricity

Programmable metallization cell switch and memory units containing the same

#42 | 2010-05-06
US20100110759A1
Physics

Programmable resistive memory cell with filament placement structure

#43 | 2010-05-06
US20100110758A1
Physics

Structures for resistive random access memory cells

#44 | 2010-05-06
US20100110746A1
Physics

Memory cell with alignment structure

#45 | 2010-05-06
US20100108975A1
Electricity

NON-VOLATILE MEMORY CELL FORMATION

#46 | 2010-04-29
US20100104115A1
Electricity

MICRO MAGNETIC SPEAKER DEVICE WITH BALANCED MEMBRANE

#47 | 2010-04-29
US20100102406A1
Physics

Magnetic stack design

#48 | 2010-04-29
US20100102369A1
Electricity

FERROELECTRIC MEMORY WITH MAGNETOELECTRIC ELEMENT

#49 | 2010-04-29
US20100102308A1
Electricity

Programmable resistive memory cell with oxide layer

#50 | 2010-04-29
US20100102289A1
Physics

Nonvolatile resistive memory devices

#51 | 2010-04-08
US20100084724A1
Physics

Memory cell with stress-induced anisotropy

#52 | 2010-02-18
US20100039105A1
Physics

Magnetic oscillator based biosensor

#53 | 2010-02-18
US20100038735A1
Electricity

Magnet-assisted transistor devices

#54 | 2010-02-11
US20100034008A1
Physics

Magnetic field assisted STRAM cells

#55 | 2010-02-11
US20100032778A1
Electricity

Magnetic memory with separate read and write paths

#56 | 2010-02-11
US20100032636A1
Electricity

Non-volatile memory cell with enhanced filament formation characteristics

#57 | 2009-12-24
US20090315088A1
Physics

Ferroelectric memory using multiferroics

#58 | 2009-12-10
US20090303076A1
Electricity

WIRELESS AND BATTERY-LESS MONITORING UNIT

#59 | 2009-11-26
US20090289736A1
Electricity

MAGNETIC SWITCHES FOR SPINWAVE TRANSMISSION

#60 | 2009-11-19
US20090283816A1
Electricity

Band engineered high-K tunnel oxides for non-volatile memory

#61 | 2009-10-29
US20090268352A1
Electricity

ST-RAM magnetic element configurations to reduce switching current

#62 | 2009-07-23
US20090184930A1
Physics

POSITION DETECTING DISPLAY PANEL

#63 | 2008-09-18
US20080225426A1
Physics

Magnetic recording device including a thermal proximity sensor

#64 | 2007-09-13
US20070211362A1
Physics

Readback system providing a combined sample output including multiple samples per bit

#65 | 2007-09-13
US20070209437A1
Performing operations; transporting

Magnetic MEMS device

InventorID:

567897 ⎘