Singerlands, New York
United States
94
2019-11-14
The entities that hold a legal rights for patent applications filed by inventor Wang Junli:
Junli Wang from Singerlands, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Metal-insulator-metal capacitor structure
#2 | 2019-10-10Metal-insulator-metal capacitor structure
#3 | 2018-11-01Method of forming silicon germanium and silicon fins on oxide from bulk wafer
#4 | 2018-10-18Silicon germanium fin channel formation
#5 | 2018-10-04CMOS compatible fuse or resistor using self-aligned contacts
#6 | 2018-09-20Replacement metal gate structures
#7 | 2018-08-16Replacement metal gate structures
#8 | 2018-05-24Strained FinFET source drain isloation
#9 | 2018-03-22Method and structure for forming FinFET CMOS with dual doped STI regions
#10 | 2018-03-06Vertical-transport field-effect transistors with a damascene gate strap
#11 | 2018-03-01Replacement metal gate structures
#12 | 2018-03-01Semiconductor via structure with lower electrical resistance
#13 | 2018-02-22Replacement metal gate structures
#14 | 2018-02-15Replacement metal gate structures
#15 | 2017-11-16CMOS compatible fuse or resistor using self-aligned contacts
#16 | 2017-10-12Recess liner for silicon germanium fin formation
#17 | 2017-08-17Replacement metal gate structures
#18 | 2017-08-17Replacement metal gate structures
#19 | 2017-07-06Silicon germanium fin channel formation
#20 | 2017-07-04Recess liner for silicon germanium fin formation
#21 | 2017-06-15Cmos compatible fuse or resistor using self-aligned contacts
#22 | 2017-05-25Preventing buried oxide gouging during planar and FinFET processing on SOI
#23 | 2017-05-25FINFET WITH POST-RMG GATE CUT
#24 | 2017-05-25Semiconductor via structure with lower electrical resistance
#25 | 2017-05-18FinFET devices
#26 | 2017-05-04Retaining strain in finFET devices
#27 | 2017-05-04Retaining strain in finFET devices
#28 | 2017-05-04MIM capacitor formation in RMG module
#29 | 2017-03-23Metal-insulator-metal capacitor structure
#30 | 2017-03-23Metal-insulator-metal capacitor structure
#31 | 2017-03-23Metal-insulator-metal capacitor structure
#32 | 2017-03-09Method and structure for forming FinFET CMOS with dual doped STI regions
#33 | 2017-03-09METHOD AND STRUCTURE FOR FORMING FINFET CMOS WITH DUAL DOPED STI REGIONS
#34 | 2017-03-02Method and structure for forming FinFET CMOS with dual doped STI regions
#35 | 2017-03-02CMOS compatible fuse or resistor using self-aligned contacts
#36 | 2017-03-02CMOS compatible fuse or resistor using self-aligned contacts
#37 | 2017-02-23FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure
#38 | 2017-02-16Silicon germanium fin channel formation
#39 | 2017-02-14Forming semiconductor device with close ground rules
#40 | 2017-02-09Forming field effect transistor device spacers
#41 | 2017-02-09MIM capacitor formation in RMG module
#42 | 2017-02-09Field effect transistor device spacers
#43 | 2017-02-09MIM capacitor formation in RMG module
#44 | 2017-02-09Method for forming field effect transistors
#45 | 2017-02-02Field effect transistor contacts
#46 | 2017-01-24Forming semiconductor device with close ground rules
#47 | 2017-01-19Silicon germanium fin channel formation
#48 | 2017-01-19Silicon germanium and silicon fins on oxide from bulk wafer
#49 | 2016-12-29Replacement metal gate structures
#50 | 2016-12-29FinFET devices
#51 | 2016-12-29FinFET devices
#52 | 2016-12-29FinFET devices
#53 | 2016-12-27Method and structure for forming FinFET CMOS with dual doped STI regions
#54 | 2016-12-15Capacitors
#55 | 2016-11-24Directly forming SiGe fins on oxide
#56 | 2016-11-10Strained FinFET source drain isolation
#57 | 2016-11-10Work function metal fill for replacement gate fin field effect transistor process
#58 | 2016-11-08MIM capacitor formation in RMG module
#59 | 2016-11-01Field effect transistor contacts
#60 | 2016-10-18Field effect transistor device spacers
#61 | 2016-10-13Work function metal fill for replacement gate fin field effect transistor process
#62 | 2016-09-29Replacement metal gate structures
#63 | 2016-09-13FinFET with reduced source and drain resistance
#64 | 2016-08-30Directly forming SiGe fins on oxide
#65 | 2016-08-25Epitaxial silicon germanium fin formation using sacrificial silicon fin templates
#66 | 2016-08-25Preventing buried oxide gouging during planar and FinFET processing on SOI
#67 | 2016-08-25Epitaxial silicon germanium fin formation using sacrificial silicon fin templates
#68 | 2016-08-16Silicon germanium and silicon fins on oxide from bulk wafer
#69 | 2016-07-19FinFET with reduced source and drain resistance
#70 | 2016-07-14Bottom-up metal gate formation on replacement metal gate finFET devices
#71 | 2016-06-21Integrated FinFET capacitor
#72 | 2016-05-12Microstructure of metal interconnect layer
#73 | 2016-05-10Integrated FinFET capacitor
#74 | 2015-11-05Structure for preventing buried oxide gouging during planar and FinFET Processing on SOI
#75 | 2015-08-20Work function metal fill for replacement gate fin field effect transistor process
#76 | 2015-05-28FINFET WITH MERGE-FREE FINS
#77 | 2015-05-21FINFET WITH MERGE-FREE FINS
#78 | 2015-05-21Replacement metal gate FinFET
#79 | 2015-05-21Replacement metal gate finFET
#80 | 2015-05-21Replacement metal gate FinFET
#81 | 2015-05-14Semiconductor device with raised source/drain and replacement metal gate
#82 | 2014-12-25Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layer
#83 | 2014-12-25Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layer
#84 | 2014-06-19FinFET with merge-free fins
#85 | 2014-06-19FINFET WITH MERGE-FREE FINS
#86 | 2014-06-05Semiconductor device with replacement metal gate and method for selective deposition of material for replacement metal gate
#87 | 2014-05-01Insulative cap for borderless self-aligning contact in semiconductor device
#88 | 2014-05-01Insulative cap for borderless self-aligning contact in semiconductor device
#89 | 2014-04-24Replacement metal gate FinFET
#90 | 2014-04-24Replacement metal gate FinFET
#91 | 2014-01-16FIELD EFFECT TRANSISTOR DEVICES HAVING THICK GATE DIELECTRIC LAYERS AND THIN GATE DIELECTRIC LAYERS
#92 | 2013-12-19REPLACEMENT METAL GATE PROCESSING WITH REDUCED INTERLEVEL DIELECTRIC LAYER ETCH RATE
#93 | 2013-10-01Replacement metal gate processing with reduced interlevel dielectric layer etch rate
#94 | 2013-07-23Field effect transistor devices having thick gate dielectric layers and thin gate dielectric layers
573265 ⎘