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Inventor profile of:

CHAO-YANG CHEN

City:

HSINCHU

Country:

Taiwan

Published Applications:

8

Last publication date:

2023-06-22

Top Assignees for applications by CHAO-YANG CHEN

The entities that hold a legal rights for patent applications filed by inventor CHEN CHAO-YANG:

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 5 Hsinchu, Taiwan
  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 2 Hsinchu, Taiwan

Recent patent applications by CHEN CHAO-YANG

CHAO-YANG CHEN from HSINCHU, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-06-22
US20230197847A1
Electricity

WAKEUP-FREE FERROELECTRIC MEMORY DEVICE

#2 | 2023-06-15
US20230187426A1
Electricity

INTEGRATED CIRCUIT LAYOUT AND INTEGRATED CIRCUIT LAYOUT METHOD FOR FILTER

#3 | 2022-12-01
US20220384724A1
Electricity

HIGH ELECTRON AFFINITY DIELECTRIC LAYER TO IMPROVE CYCLING

#4 | 2021-05-06
US20210135105A1
Electricity

High electron affinity dielectric layer to improve cycling

#5 | 2021-04-01
US20210098630A1
Electricity

Wakeup-free ferroelectric memory device

#6 | 2021-02-11
US20210043257A1
Physics

Multi-step reset technique to enlarge memory window

#7 | 2020-11-26
US20200372955A1
Physics

Multi-step reset technique to enlarge memory window

#8 | 2020-11-12
US20200357927A1
Electricity

Wakeup-free ferroelectric memory device

InventorID:

5771096 ⎘

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