Itami-shi
Japan
10
2014-12-18
The entities that hold a legal rights for patent applications filed by inventor Osada Hideki:
Hideki Osada from Itami-shi, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
Group III nitride crystal substrates and group III nitride crystal
#2 | 2014-03-06GaN single crystal substrate having a large area and a main surface whose plane orientation is other than (0001) and (000-1)
#3 | 2013-12-19Method for producing group III nitride crystal
#4 | 2013-05-30Nitride semiconductor substrate
#5 | 2012-12-27Group III nitride crystal and method for producing the same
#6 | 2012-03-29METHOD FOR GROWING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE
#7 | 2012-02-09Method of Manufacturing Nitride Semiconductor Substrate
#8 | 2011-03-10GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof
#9 | 2010-09-02Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer
#10 | 2008-12-18GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate
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