Inventor profile of:

Todd A. Marquart

City:

Boise, Idaho

Country:

United States

Published Applications:

25

Last publication date:

2025-10-30

Top Assignees for applications by Todd A. Marquart

The entities that hold a legal rights for patent applications filed by inventor Marquart Todd A.:

Recent patent applications by Marquart Todd A.

Todd A. Marquart from Boise, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-10-30
US20250336729A1
Electricity

SECTION YIELDING IN STACKED MEMORY ARCHITECTURES

#2 | 2024-12-05
US20240403160A1
Physics

PARITY DATA IN DYNAMIC RANDOM ACCESS MEMORY (DRAM)

#3 | 2023-06-15
US20230185660A1
Physics

Parity data in dynamic random access memory (DRAM)

#4 | 2023-02-09
US20230044883A1
Physics

Partitioned memory having error detection capability

#5 | 2023-01-19
US20230017942A1
Physics

Memory sub-system event log management

#6 | 2022-11-03
US20220350517A1
Physics

Separate partition for buffer and snapshot memory

#7 | 2022-09-15
US20220291865A1
Physics

Partitions within snapshot memory for buffer and snapshot memory

#8 | 2022-07-07
US20220215895A1
Physics

Read voltage calibration for copyback operation

#9 | 2022-06-23
US20220197771A1
Physics

Threshold voltage distribution adjustment for buffer

#10 | 2022-06-23
US20220197737A1
Physics

Parity data in dynamic random access memory (DRAM)

#11 | 2022-06-16
US20220189571A1
Physics

Trims corresponding to program/erase cycles

#12 | 2022-03-03
US20220068426A1
Physics

Read voltage calibration for copyback operation

#13 | 2022-03-03
US20220066898A1
Physics

Separate trims for buffer and snapshot

#14 | 2022-03-03
US20220066679A1
Physics

Memory sub-system event log management

#15 | 2022-03-03
US20220066642A1
Physics

Data management during a copyback operation

#16 | 2022-02-24
US20220057944A1
Physics

TRIM DETERMINATION BASED ON POWER AVAILABILITY

#17 | 2022-02-17
US20220051722A1
Physics

Threshold voltage based on program/erase cycles

#18 | 2022-02-17
US20220050759A1
Physics

Threshold voltage distribution adjustment for buffer

#19 | 2022-02-17
US20220050746A1
Physics

Partitioned memory having error detection capability

#20 | 2022-02-17
US20220050625A1
Physics

Partitions within snapshot memory for buffer and snapshot memory

#21 | 2022-02-17
US20220050613A1
Physics

Separate partition for buffer and snapshot memory

#22 | 2022-02-17
US20220050601A1
Physics

Trims corresponding to logical unit quantity

#23 | 2019-11-21
US20190354421A1
Physics

Adaptive scan frequency for detecting errors in a memory system

#24 | 2013-12-26
US20130346812A1
Physics

WEAR LEVELING MEMORY USING ERROR RATE

#25 | 2013-04-04
US20130083606A1
Physics

Lifetime markers for memory devices

InventorID:

590139 ⎘