Inventor profile of:

Guru Mathur

City:

Plano, Texas

Country:

United States

Published Applications:

27

Last publication date:

2024-09-12

Top Assignees for applications by Guru Mathur

The entities that hold a legal rights for patent applications filed by inventor Mathur Guru:

Recent patent applications by Mathur Guru

Guru Mathur from Plano, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-09-12
US20240304719A1
Electricity

TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET

#2 | 2022-02-17
US20220052195A1
Electricity

Trench gate trench field plate vertical MOSFET

#3 | 2021-06-24
US20210193809A1
Electricity

Laterally diffused metal oxide semiconductor with gate poly contact within source window

#4 | 2020-12-03
US20200381552A1
Electricity

Trench gate trench field plate vertical MOSFET

#5 | 2019-05-23
US20190157379A1
Electricity

Analog capacitor on submicron pitch metal level

#6 | 2019-01-08
US15793690
Electricity

Analog capacitor on submicron pitch metal level

#7 | 2019-01-03
US20190006514A1
Electricity

Laterally diffused metal oxide semiconductor with gate poly contact within source window

#8 | 2018-12-18
US15793607
Electricity

Capacitor with improved voltage coefficients

#9 | 2018-07-05
US20180190814A1
Electricity

Laterally diffused metal oxide semiconductor with gate poly contact within source window

#10 | 2018-04-19
US20180108729A1
Electricity

Structures to avoid floating resurf layer in high voltage lateral devices

#11 | 2018-02-22
US20180053765A1
Electricity

Dual deep trenches for high voltage isolation

#12 | 2017-12-28
US20170373184A1
Electricity

Trench gate trench field plate vertical mosfet

#13 | 2017-10-10
US15238198
Electricity

Dual deep trenches for high voltage isolation

#14 | 2017-08-03
US20170222040A1
Electricity

Trench gate trench field plate vertical MOSFET

#15 | 2017-05-04
US20170125513A1
Electricity

Trench gate trench field plate vertical MOSFET

#16 | 2016-09-01
US20160254346A1
Electricity

Structures to avoid floating RESURF layer in high voltage lateral devices

#17 | 2015-12-03
US20150349092A1
Electricity

Trench gate trench field plate semi-vertical semi-lateral MOSFET

#18 | 2015-11-26
US20150340496A1
Electricity

Transistor having double isolation with one floating isolation

#19 | 2015-11-12
US20150325638A1
Electricity

Vertical trench MOSFET device in integrated power technologies

#20 | 2015-09-24
US20150270391A1
Electricity

Semiconductor structure with a doped region between two deep trench isolation structures

#21 | 2015-07-30
US20150214096A1
Electricity

Sinker with a reduced width

#22 | 2015-04-30
US20150118861A1
Electricity

CZOCHRALSKI SUBSTRATES HAVING REDUCED OXYGEN DONORS

#23 | 2015-04-09
US20150097231A1
Electricity

Vertical trench MOSFET device in integrated power technologies

#24 | 2015-04-09
US20150097230A1
Electricity

Trench gate trench field plate vertical MOSFET

#25 | 2015-04-09
US20150097225A1
Electricity

Trench gate trench field plate semi-vertical semi-lateral MOSFET

#26 | 2015-01-22
US20150021687A1
Electricity

Semiconductor structure with a doped region between two deep trench isolation structures

#27 | 2014-01-02
US20140001596A1
Electricity

Sinker with a reduced width

InventorID:

592875 ⎘