Inventor profile of:

Po-Wei Liu

City:

Tainan

Country:

Taiwan

Published Applications:

46

Last publication date:

2024-11-14

Top Assignees for applications by Po-Wei Liu

The entities that hold a legal rights for patent applications filed by inventor Liu Po-Wei:

Recent patent applications by Liu Po-Wei

Po-Wei Liu from Tainan, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-11-14
US20240381637A1
Electricity

FIELD EFFECT TRANSISTOR WITH TOP-PROTECTED GATE ELECTRODE AND METHODS FOR FORMING THE SAME

#2 | 2024-09-05
US20240296890A1
Physics

ONON sidewall structure for memory device and method for making the same

#3 | 2024-03-21
US20240096941A1
Electricity

SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHOD THEREOF

#4 | 2024-03-14
US20240088125A1
Electricity

BCD DEVICE LAYOUT AREA DEFINED BY A DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FORMING THE SAME

#5 | 2023-11-09
US20230363155A1
Electricity

Strap-cell architecture for embedded memory

#6 | 2023-10-19
US20230335196A1
Physics

ONON sidewall structure for memory device and method for making the same

#7 | 2023-09-14
US20230290411A1
Physics

Device-region layout for embedded flash

#8 | 2023-04-13
US20230112168A1
Electricity

Strap-cell architecture for embedded memory

#9 | 2023-01-19
US20230019614A1
Electricity

Semiconductor structure

#10 | 2022-12-01
US20220384277A1
Electricity

Deep trench isolation structure and method of making the same

#11 | 2022-11-03
US20220352308A1
Electricity

Selective polysilicon growth for deep trench polysilicon isolation structure

#12 | 2022-11-03
US20220352142A1
Electricity

BCD device layout area defined by a deep trench isolation structure and methods for forming the same

#13 | 2022-02-10
US20220044729A1
Physics

Device-region layout for embedded flash

#14 | 2021-12-23
US20210399103A1
Electricity

Control gate strap layout to improve a word line etch process window

#15 | 2021-09-09
US20210280593A1
Electricity

Semiconductor device and manufacturing method thereof

#16 | 2021-07-29
US20210233819A1
Electricity

Deep trench isolation structure and method of making the same

#17 | 2021-07-22
US20210225857A1
Electricity

Semiconductor device and manufacturing method thereof

#18 | 2021-07-01
US20210202737A1
Electricity

Semiconductor structure and method for forming the same

#19 | 2021-06-17
US20210183875A1
Electricity

Strap-cell architecture for embedded memory

#20 | 2021-04-29
US20210126089A1
Electricity

Selective polysilicon growth for deep trench polysilicon isolation structure

#21 | 2021-03-11
US20210074360A1
Physics

Device-region layout for embedded flash

#22 | 2020-07-09
US20200219892A1
Electricity

Method to reduce kink effect in semiconductor devices

#23 | 2020-06-18
US20200194266A1
Electricity

Non-volatile memory semiconductor device with electrostatic discharge protection, planarization layers, and manufacturing method thereof

#24 | 2020-05-21
US20200161317A1
Electricity

Semiconductor device and manufacturing method thereof

#25 | 2020-04-02
US20200105775A1
Electricity

Strap-cell architecture for embedded memory

#26 | 2020-04-02
US20200105346A1
Physics

Device-region layout for embedded flash

#27 | 2020-03-26
US20200098877A1
Electricity

Control gate strap layout to improve a word line etch process window

#28 | 2019-11-21
US20190355731A1
Electricity

Method to reduce kink effect in semiconductor devices

#29 | 2019-07-25
US20190229123A1
Electricity

Semiconductor device and manufacturing method thereof

#30 | 2019-05-23
US20190157281A1
Electricity

Semiconductor device and manufacturing method thereof

#31 | 2019-02-28
US20190067305A1
Electricity

Semiconductor structure for memory device and method for forming the same

#32 | 2018-11-01
US20180315764A1
Electricity

Semiconductor device and manufacturing method thereof

#33 | 2018-07-12
US20180197873A1
Electricity

Semiconductor device and manufacturing method thereof

#34 | 2018-05-31
US20180151375A1
Electricity

Non-volatile memory semiconductor device and manufacturing method thereof

#35 | 2018-03-01
US20180061847A1
Electricity

Semiconductor memory device and manufacturing method thereof

#36 | 2018-02-01
US20180033796A1
Electricity

Semiconductor device and method for manufacturing the same

#37 | 2018-01-18
US20180019251A1
Electricity

Semiconductor device and manufacturing method thereof

#38 | 2017-08-08
US15236533
Electricity

Semiconductor structure and fabricating method thereof

#39 | 2016-08-04
US20160225780A1
Electricity

Logic compatible flash memory cells

#40 | 2016-02-04
US20160035736A1
Electricity

High endurance non-volatile memory cell

#41 | 2016-01-14
US20160013195A1
Electricity

Method to improve memory cell erasure

#42 | 2015-07-30
US20150214237A1
Electricity

Method of forming a logic compatible flash memory

#43 | 2015-01-22
US20150021679A1
Electricity

Architecture to improve cell size for compact array of split gate flash cell with buried common source structure

#44 | 2014-09-18
US20140264534A1
Electricity

Architecture to improve cell size for compact array of split gate flash cell

#45 | 2014-06-05
US20140151782A1
Electricity

Methods and apparatus for non-volatile memory cells with increased programming efficiency

#46 | 2012-11-29
US20120299098A1
Electricity

Fin-like field effect transistor (FinFET) non-volatile random access memory (NVRAM) device with bottom erase gate

InventorID:

6001237 ⎘