Inventor profile of:

Te-An Chen

City:

Taichung

Country:

Taiwan

Published Applications:

18

Last publication date:

2024-08-01

Top Assignees for applications by Te-An Chen

The entities that hold a legal rights for patent applications filed by inventor Chen Te-An:

Recent patent applications by Chen Te-An

Te-An Chen from Taichung, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-08-01
US20240258402A1
Electricity

SCHOTTKY BARRIER DIODE WITH REDUCED LEAKAGE CURRENT AND METHOD OF FORMING THE SAME

#2 | 2024-03-21
US20240096689A1
Electricity

Semiconductor device including an isolation region having an edge being covered and manufacturing method for the same

#3 | 2023-09-14
US20230290787A1
Electricity

Method for forming integrated circuit

#4 | 2022-12-29
US20220415706A1
Electricity

Semiconductor device including an isolation region having an edge being covered and manufacturing method for the same

#5 | 2022-11-17
US20220367451A1
Electricity

Semiconductor device and method of fabricating the same

#6 | 2022-10-13
US20220328472A1
Electricity

Methods of forming a semiconductor device

#7 | 2022-09-08
US20220285524A1
Electricity

Schottky barrier diode with reduced leakage current and method of forming the same

#8 | 2022-09-08
US20220285496A1
Electricity

Semiconductor structure and method of forming the same

#9 | 2022-02-17
US20220052041A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

#10 | 2021-12-02
US20210375899A1
Electricity

Semiconductor device and manufacturing method thereof

#11 | 2021-11-04
US20210343704A1
Electricity

Semiconductor device having different voltage regions

#12 | 2021-10-28
US20210335821A1
Electricity

Method for forming integrated circuit

#13 | 2021-10-28
US20210335782A1
Electricity

Semiconductor device and method of fabricating the same

#14 | 2021-10-14
US20210320131A1
Electricity

Semiconductor structure

#15 | 2021-07-01
US20210202716A1
Electricity

Schottky barrier diode with reduced leakage current and method of forming the same

#16 | 2021-07-01
US20210202528A1
Electricity

Boundary scheme for semiconductor integrated circuit and method for forming an integrated circuit

#17 | 2021-05-06
US20210134678A1
Electricity

Method of manufacturing semiconductor devices having controlled S/D epitaxial shape

#18 | 2020-07-30
US20200243565A1
Electricity

Semiconductor structure and method of forming the same

InventorID:

6006182 ⎘