Inventor profile of:

Tsutomu Ogihara

City:

Joetsu

Country:

Japan

Published Applications:

62

Last publication date:

2023-10-19

Top Assignees for applications by Tsutomu Ogihara

The entities that hold a legal rights for patent applications filed by inventor Ogihara Tsutomu:

Recent patent applications by Ogihara Tsutomu

Tsutomu Ogihara from Joetsu, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-10-19
US20230333472A1
Physics

THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS

#2 | 2023-08-31
US20230274936A1
Electricity

PLANARIZING AGENT FOR FORMING ORGANIC FILM, COMPOSITION FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS

#3 | 2023-08-03
US20230244149A1
Physics

Composition for forming silicon-containing resist underlayer film and patterning process

#4 | 2023-06-29
US20230203354A1
Chemistry; metallurgy

MATERIAL FOR FORMING ADHESIVE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING ADHESIVE FILM

#5 | 2023-02-23
US20230059089A1
Physics

MATERIAL FOR FORMING ADHESIVE FILM, METHOD FOR FORMING ADHESIVE FILM USING THE SAME, AND PATTERNING PROCESS USING MATERIAL FOR FORMING ADHESIVE FILM

#6 | 2022-07-14
US20220221793A1
Physics

COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND

#7 | 2022-07-07
US20220214618A1
Physics

MATERIAL FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND POLYMER

#8 | 2021-12-23
US20210397092A1
Physics

Resist underlayer film material, patterning process, and method for forming resist underlayer film

#9 | 2021-10-28
US20210335649A1
Electricity

Method for controlling flatness, method for forming coating film, apparatus for controlling flatness, and apparatus for forming coating film

#10 | 2021-09-09
US20210278766A1
Physics

Coating-type composition for forming organic film, patterning process, polymer, and method for manufacturing polymer

#11 | 2021-03-25
US20210088908A1
Physics

Composition for forming silicon-containing resist underlayer film and patterning process

#12 | 2021-01-28
US20210026246A1
Physics

Composition for forming silicon-containing resist underlayer film and patterning process

#13 | 2021-01-07
US20210003920A1
Physics

Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and polymer

#14 | 2020-12-03
US20200381247A1
Electricity

Material for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, and patterning process

#15 | 2020-11-12
US20200356007A1
Physics

Composition for forming organic film, patterning process, and polymer

#16 | 2020-10-29
US20200341377A1
Physics

Composition for forming silicon-containing resist underlayer film and patterning process

#17 | 2020-10-29
US20200340806A1
Physics

Method for measuring distance of diffusion of curing catalyst

#18 | 2020-10-22
US20200333709A1
Physics

Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film

#19 | 2020-10-22
US20200332062A1
Chemistry; metallurgy

Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film

#20 | 2020-07-23
US20200233303A1
Physics

Composition for forming silicon-containing resist underlayer film and patterning process

#21 | 2020-07-09
US20200216670A1
Chemistry; metallurgy

Thermosetting silicon-containing compound, composition for forming a silicon-containing film, and patterning process

#22 | 2020-05-21
US20200159120A1
Physics

Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process

#23 | 2020-05-14
US20200148709A1
Chemistry; metallurgy

Method for producing iodine-containing silicon compound

#24 | 2019-12-26
US20190391493A1
Physics

Compound and composition for forming organic film

#25 | 2019-12-26
US20190390000A1
Chemistry; metallurgy

Compound, method for manufacturing the compound, and composition for forming organic film

#26 | 2019-11-21
US20190354017A1
Physics

Patterning process

#27 | 2019-11-21
US20190354016A1
Physics

Patterning process

#28 | 2019-10-03
US20190300498A1
Chemistry; metallurgy

Compound, composition for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, and patterning process

#29 | 2019-08-22
US20190258160A1
Physics

Resist composition and patterning process

#30 | 2019-06-27
US20190198341A1
Electricity

Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and patterning process

#31 | 2019-06-27
US20190194391A1
Chemistry; metallurgy

Method for producing dihydroxynaphthalene condensate and dihydroxynaphthalene condensate

#32 | 2019-02-28
US20190067021A1
Electricity

Polymer and composition for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, and patterning process

#33 | 2019-02-28
US20190064659A1
Physics

Composition for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, patterning process, and polymer

#34 | 2019-01-24
US20190027369A1
Electricity

Composition for forming organic film, patterning process, and resin for forming organic film

#35 | 2018-11-01
US20180315594A1
Electricity

Method of cleaning and drying semiconductor substrate

#36 | 2018-10-04
US20180284615A1
Physics

Resist underlayer film composition, patterning process, and method for forming resist underlayer film

#37 | 2018-10-04
US20180284614A1
Physics

Resist underlayer film composition, patterning process, and method for forming resist underlayer film

#38 | 2016-06-02
US20160154314A1
Physics

Rinse solution for pattern formation and pattern forming process

#39 | 2016-06-02
US20160154312A1
Physics

Rinse solution for pattern formation and pattern forming process

#40 | 2014-12-11
US20140363958A1
Electricity

Underlayer film-forming composition and pattern forming process

#41 | 2014-12-11
US20140363957A1
Electricity

Underlayer film-forming composition and pattern forming process

#42 | 2014-12-11
US20140363956A1
Electricity

Underlayer film-forming composition and pattern forming process

#43 | 2014-12-11
US20140363955A1
Electricity

Underlayer film-forming composition and pattern forming process

#44 | 2014-12-11
US20140363768A1
Chemistry; metallurgy

Naphthalene derivative, resist bottom layer material, and patterning process

#45 | 2014-08-21
US20140235057A1
Electricity

Pattern forming process

#46 | 2014-08-21
US20140234785A1
Physics

Pattern forming process

#47 | 2014-08-21
US20140234781A1
Physics

Pattern forming process

#48 | 2014-08-14
US20140227641A1
Physics

Silicon-containing antireflective coatings including non-polymeric silsesquioxanes

#49 | 2012-10-04
US20120252218A1
Chemistry; metallurgy

Biphenyl derivative, resist bottom layer material, bottom layer forming method, and patterning process

#50 | 2012-03-15
US20120064725A1
Chemistry; metallurgy

Naphthalene derivative, resist bottom layer material, and patterning process

#51 | 2011-12-22
US20110311920A1
Chemistry; metallurgy

Naphthalene derivative, resist bottom layer material, resist bottom layer forming method, and patterning process

#52 | 2009-05-28
US20090136869A1
Physics

Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method

#53 | 2009-01-08
US20090011372A1
Chemistry; metallurgy

Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method

#54 | 2008-11-06
US20080274432A1
Chemistry; metallurgy

Silicone-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method

#55 | 2008-01-31
US20080026322A1
Chemistry; metallurgy

Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method

#56 | 2007-10-11
US20070238300A1
Chemistry; metallurgy

Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method

#57 | 2007-05-24
US20070117252A1
Chemistry; metallurgy

Silicon-containing antireflective coating forming composition, silicon-containing antireflective coating, substrate processing intermediate, and substrate processing method

#58 | 2007-05-24
US20070117044A1
Physics

Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method

#59 | 2005-12-15
US20050277756A1
Chemistry; metallurgy

Porous film-forming composition, patterning process, and porous sacrificial film

#60 | 2005-12-15
US20050277755A1
Physics

Sacrificial film-forming composition, patterning process, sacrificial film and removal method

#61 | 2005-12-15
US20050277058A1
Physics

Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same

#62 | 2005-12-15
US20050274692A1
Physics

Sacrificial film-forming composition, patterning process, sacrificial film and removal method

InventorID:

6011098 ⎘