Inventor profile of:

Jun Komiyama

City:

Hadano

Country:

Japan

Published Applications:

15

Last publication date:

2021-06-17

Top Assignees for applications by Jun Komiyama

The entities that hold a legal rights for patent applications filed by inventor Komiyama Jun:

Recent patent applications by Komiyama Jun

Jun Komiyama from Hadano, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2021-06-17
US20210184004A1
Electricity

Nitride semiconductor substrate and method of manufacturing the same

#2 | 2021-01-28
US20210028284A1
Electricity

Nitride semiconductor substrate

#3 | 2020-06-18
US20200194545A1
Electricity

Nitride semiconductor substrate

#4 | 2017-04-20
US20170110414A1
Electricity

Compound semiconductor substrate

#5 | 2017-01-12
US20170011919A1
Electricity

Nitride semiconductor substrate having recesses at interface between base substrate and initial nitride

#6 | 2016-10-06
US20160293710A1
Electricity

Nitride semiconductor substrate

#7 | 2014-11-20
US20140339679A1
Electricity

Nitride semiconductor substrate

#8 | 2014-10-30
US20140319535A1
Electricity

Nitride semiconductor substrate

#9 | 2014-02-27
US20140055783A1
Physics

Method of analyzing nitride semiconductor layer and method of manufacturing nitride semiconductor substrate using the analysis method

#10 | 2013-04-04
US20130082355A1
Electricity

Nitride semiconductor substrate

#11 | 2012-08-23
US20120211763A1
Electricity

Nitride semiconductor substrate and method of manufacturing the same

#12 | 2011-03-17
US20110062556A1
Electricity

Compound semiconductor substrate comprising a multilayer buffer layer

#13 | 2006-06-29
US20060138448A1
Electricity

Compound semiconductor and compound semiconductor device using the same

#14 | 2006-01-19
US20060011941A1
Physics

Substrate for growing electro-optical single crystal thin film and method of manufacturing the same

#15 | 2005-08-30
US10432597
-

Semiconductor wafer and its manufacturing method

InventorID:

6019707 ⎘