Taichung
Taiwan
14
2023-11-23
The entities that hold a legal rights for patent applications filed by inventor Chen Hung-Kai:
Hung-Kai Chen from Taichung, TW has applied for patents for these inventions. The list has both pending applications and granted patents:
CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING
#2 | 2022-08-11SRAM structure and method for forming the same
#3 | 2022-05-19Cut metal gate process for reducing transistor spacing
#4 | 2021-08-05Etch stop layer between substrate and isolation structure
#5 | 2020-08-06Cut metal gate process for reducing transistor spacing
#6 | 2020-03-19Etch stop layer between substrate and isolation structure
#7 | 2020-01-02SRAM structure and method for forming the same
#8 | 2019-10-17Cut metal gate process for reducing transistor spacing
#9 | 2019-05-30Cut metal gate process for reducing transistor spacing
#10 | 2019-05-23Etch stop layer between substrate and isolation structure
#11 | 2016-09-08Doping for FinFET
#12 | 2015-08-27Doping for FinFET
#13 | 2015-04-30Dual epitaxial process for a finFET device
#14 | 2011-09-01Dual epitaxial process for a finFET device
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