Itami
Japan
27
2021-09-23
The entities that hold a legal rights for patent applications filed by inventor Nishiguchi Taro:
Taro Nishiguchi from Itami, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
#2 | 2020-11-19Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device
#3 | 2020-02-13Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device
#4 | 2019-01-17Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
#5 | 2018-12-20Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
#6 | 2018-09-27Silicon carbide epitaxial substrate having a silicon carbide layer and method of manufacturing silicon carbide semiconductor device
#7 | 2018-07-26Epitaxial wafer and method for manufacturing same
#8 | 2018-07-19Semiconductor device and method for manufacturing same
#9 | 2018-04-05Method for manufacturing silicon carbide epitaxial substrate, silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device
#10 | 2016-12-08Method for manufacturing silicon carbide epitaxial substrate, and silicon carbide epitaxial substrate
#11 | 2016-11-10Epitaxial wafer and method for manufacturing same
#12 | 2016-08-11Silicon carbide semiconductor substrate and method for manufacturing same
#13 | 2016-04-21Silicon carbide substrate and method of manufacturing the same
#14 | 2016-01-28Dislocation in SiC semiconductor substrate
#15 | 2015-08-13Method of manufacturing silicon carbide substrate
#16 | 2015-03-12Silicon carbide epitaxial substrate and method of manufacturing silicon carbide epitaxial substrate
#17 | 2015-03-05Dislocation in SiC semiconductor substrate
#18 | 2013-06-27Dislocations in SiC semiconductor substrate
#19 | 2013-03-21Silicon carbide substrate and method of manufacturing the same
#20 | 2013-01-10Semiconductor device and method for manufacturing same
#21 | 2012-12-13Single crystal silicon carbide substrate and method of manufacturing the same
#22 | 2012-12-06Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingot
#23 | 2012-11-01Method for manufacturing silicon carbide single crystal, and silicon carbide substrate
#24 | 2012-01-12Method for manufacturing silicon carbide substrate
#25 | 2012-01-12Method of manufacturing single crystal
#26 | 2011-07-21Light-emitting device
#27 | 2011-07-07Method for manufacturing semiconductor substrate
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