Inventor profile of:

Hung-Chan Lin

City:

Tainan

Country:

Taiwan

Published Applications:

28

Last publication date:

2024-07-11

Top Assignees for applications by Hung-Chan Lin

The entities that hold a legal rights for patent applications filed by inventor Lin Hung-Chan:

Recent patent applications by Lin Hung-Chan

Hung-Chan Lin from Tainan, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-07-11
US20240237554A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

#2 | 2024-07-11
US20240237553A1
Electricity

Semiconductor device and method for fabricating the same

#3 | 2024-06-27
US20240215260A1
Electricity

Magnetoresistive random access memory and method for fabricating the same

#4 | 2024-06-20
US20240206192A1
Electricity

Magnetoresistive random access memory and method for fabricating the same

#5 | 2024-06-20
US20240203471A1
Physics

Layout pattern of magnetoresistive random access memory

#6 | 2024-06-13
US20240196759A1
Electricity

MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME

#7 | 2024-03-28
US20240107777A1
Electricity

SOT MRAM structure and fabricating method of the same

#8 | 2024-01-25
US20240032441A1
Electricity

MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DEVICE AND METHOD OF FORMING THE SAME

#9 | 2023-10-05
US20230320232A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

#10 | 2023-06-22
US20230200258A1
Electricity

Semiconductor device and method for fabricating the same

#11 | 2023-05-18
US20230154514A1
Physics

Semiconductor structure and manufacturing method thereof

#12 | 2023-03-30
US20230097481A1
Electricity

Semiconductor device and method for fabricating the same

#13 | 2023-03-16
US20230084241A1
Electricity

Semiconductor device and method for fabricating the same

#14 | 2022-12-08
US20220392955A1
Electricity

Magnetoresistive random access memory and method for fabricating the same

#15 | 2022-06-23
US20220199897A1
Electricity

Magnetoresistive random access memory and method of manufacturing the same

#16 | 2021-02-04
US20210036053A1
Electricity

Semiconductor memory device

#17 | 2020-07-30
US20200243753A1
Electricity

Semiconductor device and method for fabricating the same

#18 | 2020-06-04
US20200176510A1
Electricity

Semiconductor memory device and fabrication method thereof

#19 | 2020-04-23
US20200127190A1
Electricity

Magnetoresistive random access memory with larger alignment window and method of manufacturing the same

#20 | 2020-04-09
US20200111950A1
Electricity

Semiconductor device and method for fabricating the same

#21 | 2020-04-02
US20200106000A1
Electricity

Magnetoresistance device and method for forming the same

#22 | 2020-03-05
US20200075840A1
Electricity

Magnetoresistive memory cell and method for fabricating the same

#23 | 2020-01-09
US20200013949A1
Electricity

Semiconductor device and method for fabricating the same

#24 | 2019-08-01
US20190237660A1
Electricity

Magnetoresistive random access memory with particular conductive plug and method of manufacturing the same

#25 | 2019-01-31
US20190035674A1
Electricity

Integrated circuit and manufacturing method thereof

#26 | 2018-07-24
US15613288
Electricity

Array of dynamic random access memory cells

#27 | 2018-05-31
US20180151666A1
Electricity

Method of fabricating metal-insulator-metal capacitor

#28 | 2018-04-17
US15479253
Electricity

Semiconductor memory device

InventorID:

6036675 ⎘