Inventor profile of:

Daichi Dojima

City:

Sanda

Country:

Japan

Published Applications:

9

Last publication date:

2023-12-21

Top Assignees for applications by Daichi Dojima

The entities that hold a legal rights for patent applications filed by inventor Dojima Daichi:

Recent patent applications by Dojima Daichi

Daichi Dojima from Sanda, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-12-21
US20230411225A1
Electricity

EVALUATION METHOD FOR SILICON CARBIDE SUBSTRATES

#2 | 2023-09-28
US20230304186A1
Chemistry; metallurgy

METHOD FOR MANUFACTURING ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRIDE SUBSTRATE, AND METHOD FOR FORMING ALUMINUM NITRIDE LAYER

#3 | 2023-07-06
US20230212785A1
Chemistry; metallurgy

ALUMINUM NITRIDE SUBSTRATE MANUFACTURING METHOD, ALUMINUM NITRIDE SUBSTRATE, AND METHOD OF REMOVING STRAIN LAYER INTRODUCED INTO ALUMINUM NITRIDE SUBSTRATE BY LASER PROCESSING

#4 | 2023-06-29
US20230203704A1
Chemistry; metallurgy

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PREVENTING CRACK OCCURRENCE IN GROWTH LAYER

#5 | 2023-06-22
US20230197456A1
Electricity

Silicon carbide substrate manufacturing method, silicon carbide substrate, and method of removing strain layer introduced into silicon carbide substrate by laser processing

#6 | 2023-06-22
US20230193507A1
Chemistry; metallurgy

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, AND METHOD FOR FORMING GROWN LAYER

#7 | 2023-06-01
US20230166972A1
Chemistry; metallurgy

MANUFACTURING METHOD OF MODIFIED ALUMINUM NITRIDE RAW MATERIAL, MODIFIED ALUMINUM NITRIDE RAW MATERIAL, MANUFACTURING METHOD OF ALUMINUM NITRIDE CRYSTALS, AND DOWNFALL DEFECT PREVENTION METHOD

#8 | 2023-05-25
US20230160100A1
Chemistry; metallurgy

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, AND METHOD FOR SUPPRESSING INTRODUCTION OF DISPLACEMENT TO GROWTH LAYER

#9 | 2019-05-09
US20190136411A1
Chemistry; metallurgy

Method for producing SiC substrate provided with graphene precursor and method for surface treating SiC substrate

InventorID:

6045493 ⎘