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Inventor profile of:

Ryosuke Harada

City:

Tsukuba

Country:

Japan

Published Applications:

Last publication date:

2023-03-30

Top Assignees for applications by Ryosuke Harada

The entities that hold a legal rights for patent applications filed by inventor Harada Ryosuke:

TANAKA KIKINZOKU KOGYO K.K. 16 Tokyo, Japan
National Institute of Advanced Industrial Science and Technology 2 Tokyo, Japan
Tanaka Kikinzoku Kogyo K.K. 1 Chiyoda-ku, Tokyo, Japan
Tanaka Kikinzoku K.K. 1 Tokyo, Japan

Recent patent applications by Harada Ryosuke

Ryosuke Harada from Tsukuba, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-03-30

US20230102354A1

Chemistry; metallurgy

Raw material for chemical deposition containing organoruthenium compound, and chemical deposition method using the raw material for chemical deposition

#2 | 2022-07-28

US20220235455A1

Chemistry; metallurgy

Chemical vapor deposition method using an organomanganese compound as a starting material

#3 | 2022-01-20

US20220018018A1

Chemistry; metallurgy

Raw material for chemical deposition containing ruthenium complex, and chemical deposition method using the raw material for chemical deposition

#4 | 2020-05-14

US20200148713A1

Chemistry; metallurgy

Raw material for vapor deposition including organoplatinum compound and vapor deposition method using the raw material for vapor deposition

#5 | 2019-12-05

US20190367545A1

Chemistry; metallurgy

Chemical deposition raw material including iridium complex and chemical deposition method using the chemical deposition raw material

#6 | 2019-06-13

US20190177837A1

Chemistry; metallurgy

Chemical deposition raw material including heterogeneous polynuclear complex and chemical deposition method using the chemical deposition raw material

#7 | 2018-12-20

US20180362565A1

Chemistry; metallurgy

Method for producing cyclometalated iridium complex

#8 | 2018-07-19

US20180201636A1

Chemistry; metallurgy

Chemical vapor deposition raw material including dinuclear ruthenium complex and chemical deposition method using chemical vapor deposition raw material

#9 | 2018-03-22

US20180079764A1

Chemistry; metallurgy

Heterogeneous polynuclear complex for use in the chemical deposition of composite metal or metal compound thin films

#10 | 2018-03-15

US20180072765A1

Chemistry; metallurgy

Raw material for chemical deposition composed of organoplatinum compound, and chemical deposition method using the raw material for chemical deposition

#11 | 2018-03-08

US20180066357A1

Chemistry; metallurgy

Organoplatinum compound for use in the chemical deposition of platinum compound thin films

#12 | 2017-09-07

US20170253623A1

Chemistry; metallurgy

Method for manufacturing iridium complex

#13 | 2017-08-03

US20170218509A1

Chemistry; metallurgy

Raw material for chemical deposition including organoruthenium compound, and chemical deposition method using the raw material for chemical deposition

#14 | 2016-11-10

US20160326198A1

Chemistry; metallurgy

Raw material and production method for cyclometalated iridium complex

#15 | 2016-08-11

US20160233098A1

Electricity

Method for producing nickel thin film on a Si substrate by chemical vapor deposition method, and method for producing Ni silicide thin film on Si substrate

#16 | 2016-04-28

US20160115587A1

Chemistry; metallurgy

Chemical vapor deposition raw material containing organic nickel compound, and chemical vapor deposition method using the chemical vapor deposition raw material

#17 | 2015-10-15

US20150291497A1

Chemistry; metallurgy

Method for extracting asymmetric β-diketone compound from β-diketone compound

#18 | 2015-08-13

US20150225437A1

Chemistry; metallurgy

Chemical deposition raw material formed of ruthenium complex and method for producing the same, and chemical deposition method

InventorID:

6055984 ⎘