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Inventor profile of:

Tetsuya Takeuchi

City:

Nagoya

Country:

Japan

Published Applications:

11

Last publication date:

2022-08-04

Top Assignees for applications by Tetsuya Takeuchi

The entities that hold a legal rights for patent applications filed by inventor Takeuchi Tetsuya:

MEIJO UNIVERSITY 7 Nagoya-shi, Japan
MEIJO UNIVERSITY 5 Nagoya-shi, Aichi, Japan
STANLEY ELECTRIC CO., LTD. 4 Tokyo, Japan
Meijo University 3 Nagoya, Japan
TOYODA GOSEI CO., LTD. 2 Kiyosu, Japan
MEIJO UNIVERSITY 2 Aichi, Japan
TOYODA GOSEI CO., LTD. 1 Kiyosu-shi, Japan
KOITO MANUFACTURING CO., LTD. 1 Tokyo, Japan
MELIO UNIVERSITY 1 Nagoya-shi, Japan

Recent patent applications by Takeuchi Tetsuya

Tetsuya Takeuchi from Nagoya, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2022-08-04

US20220246793A1

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

#2 | 2021-03-11

US20210074877A1

Semiconductor light emitting device and manufacturing method of semiconductor light emitting device

#3 | 2019-11-28

US20190363515A1

Vertical cavity light-emitting element

#4 | 2019-05-16

US20190148592A1

Group III nitride semiconductor light-emitting device and production method therefor

#5 | 2018-06-14

US20180166856A1

Semiconductor multilayer film mirror, vertical cavity type light-emitting element using the mirror, and methods for manufacturing the mirror and the element

#6 | 2018-06-14

US20180166855A1

Semiconductor multilayer film reflecting mirror, vertical cavity light-emitting element using the reflecting mirror, and methods for manufacturing the reflecting mirror and the element

#7 | 2016-12-15

US20160365479A1

Method of manufacturing n-p-n nitride-semiconductor light-emitting device, and n-p-n nitride-semiconductor light-emitting device

#8 | 2016-10-20

US20160308094A1

Nitride semiconductor light emitting device and method of fabricating the same

#9 | 2016-06-09

US20160163919A1

Nitride semiconductor light-emitting device with periodic gain active layers

#10 | 2016-05-26

US20160149078A1

Nitride semiconductor light-emitting device

#11 | 2016-02-25

US20160056333A1

Nitride semiconductor multilayer film reflector and light-emitting device using the same

InventorID:

6059918 ⎘