Inventor profile of:

Lars Voss

City:

Livermore, California

Country:

United States

Published Applications:

25

Last publication date:

2026-04-23

Top Assignees for applications by Lars Voss

The entities that hold a legal rights for patent applications filed by inventor Voss Lars:

Recent patent applications by Voss Lars

Lars Voss from Livermore, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-04-23
US20260110931A1
Physics

OPTICALLY ADDRESSABLE LIGHT VALVES

#2 | 2025-01-23
US20250031425A1
Electricity

FIELD ASSISTED INTERFACIAL DIFFUSION DOPING THROUGH HETEROSTRUCTURE DESIGN

#3 | 2023-10-12
US20230327400A1
Electricity

PHOTOCONDUCTIVE SEMICONDUCTOR LASER DIODES AND LEDS

#4 | 2023-09-28
US20230305359A1
Physics

Doped amorphous silicon carbide

#5 | 2021-10-21
US20210328057A1
Electricity

Three dimensional vertically structured electronic devices

#6 | 2021-08-19
US20210257463A1
Electricity

Field assisted interfacial diffusion doping through heterostructure design

#7 | 2021-05-27
US20210159337A1
Electricity

Three dimensional vertically structured electronic devices

#8 | 2021-02-11
US20210039966A1
Chemistry; metallurgy

Water purification

#9 | 2019-12-26
US20190393038A1
Electricity

Gallidation assisted impurity doping

#10 | 2019-08-22
US20190259903A1
Electricity

Three-dimensional co-axial linear photonic switch

#11 | 2019-05-02
US20190131482A1
Electricity

Three-dimensional co-axial linear photonic switch

#12 | 2018-11-08
US20180323074A1
Electricity

Metal-based passivation-assisted plasma etching of III-v semiconductors

#13 | 2018-05-24
US20180145187A1
Electricity

Liquid semiconductor-halogen based electronics

#14 | 2018-05-10
US20180131370A1
Electricity

Total internal reflection photoconductive switch

#15 | 2018-05-03
US20180122977A1
Electricity

Rapid pulse annealing of CdZnTe detectors for reducing electronic noise

#16 | 2018-05-03
US20180122713A1
Electricity

Selective surface treatment of thallium bromide (TLBR)-based detectors to improve longevity and/or restore operational capacity thereof

#17 | 2018-01-11
US20180013029A1
Electricity

Reliable electrical contacts for high power photoconductive switches

#18 | 2017-08-03
US20170222047A1
Electricity

Three dimensional vertically structured electronic devices

#19 | 2017-08-03
US20170221595A1
Physics

Radiation tolerant microstructured three dimensional semiconductor structure

#20 | 2017-07-13
US20170200833A1
Electricity

Three dimensional vertically structured MISFET/MESFET

#21 | 2017-07-13
US20170200820A1
Electricity

Three dimensional vertically structured electronic devices

#22 | 2016-12-08
US20160356901A1
Physics

Capacitance reduction for pillar structured devices

#23 | 2013-12-19
US20130334541A1
Electricity

Three dimensional strained semiconductors

#24 | 2013-07-25
US20130187056A1
Physics

Stress reduction for pillar filled structures

#25 | 2013-01-31
US20130026364A1
Performing operations; transporting

Mixed ionic-electronic conductor-based radiation detectors and methods of fabrication

InventorID:

60754 ⎘