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Inventor profile of:

Yuichi Takeuchi

City:

Obu

Country:

Japan

Published Applications:

Last publication date:

2017-11-02

Top Assignees for applications by Yuichi Takeuchi

The entities that hold a legal rights for patent applications filed by inventor Takeuchi Yuichi:

DENSO CORPORATION 19 Kariya, Japan
TOYOTA JIDOSHA KABUSHIKI KAISHA 9 Toyota-shi, Japan
DENSO CORPORATION 4 Kariya-city, Japan
DENSO CORPORATION 3 Kariya-city, Aichi-pref., Japan
DENSO CORPORATION 3 Kariya-shi, Japan
TOYOTA JIDOSHA KABUSHIKI KAISHA 3 Toyota, Japan
TOYOTA JIDOSHA KABUSHIKI KAISHA 2 Toyota-shi, Aichi-ken, Japan
DENSO CORPORATION 2 Kariya-shi, Aichi-ken, Japan
The University of Newcastle Upon Tyne 1 Newcastle upon Tyne, United Kingdom
TOYOTA JIDOSHA KABUSHIKI KAISHA 1 Kariya-shi, Japan
c/o DENSO CORPORATION 1 Kariya-city, Japan

Recent patent applications by Takeuchi Yuichi

Yuichi Takeuchi from Obu, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2017-11-02

US20170317162A1

Electricity

Semiconductor device and manufacturing method thereof

#2 | 2017-03-30

US20170092742A1

Electricity

Insulated gate type switching device and method for manufacturing the same

#3 | 2017-03-23

US20170084735A1

Electricity

Silicon carbide semiconductor device and method for producing the same

#4 | 2017-02-16

US20170047394A1

Electricity

Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device

#5 | 2016-12-01

US20160351680A1

Electricity

Method for manufacturing insulated gate type switching device having low-density body region and high-density body region

#6 | 2016-06-09

US20160163818A1

Electricity

Silicon carbide semiconductor device and method for producing the same

#7 | 2015-11-19

US20150333127A1

Electricity

Silicon carbide semiconductor device

#8 | 2015-05-14

US20150129895A1

Electricity

Silicon carbide semiconductor device and method for producing the same

#9 | 2015-04-30

US20150115286A1

Electricity

Silicon carbide semiconductor device and method for producing the same

#10 | 2015-03-12

US20150072486A1

Electricity

Method for manufacturing silicon carbide semiconductor device

#11 | 2015-03-12

US20150072485A1

Electricity

Manufacturing method for silicon carbide semiconductor device

#12 | 2015-02-19

US20150048382A1

Electricity

Silicon carbide semiconductor device including conductivity layer in trench

#13 | 2014-11-20

US20140339569A1

Electricity

Semiconductor device

#14 | 2014-10-30

US20140319577A1

Electricity

Semiconductor device having carrier extraction in electric field alleviating layer

#15 | 2014-06-12

US20140159058A1

Electricity

Silicon carbide semiconductor device having layer covering corner portion of depressed portion

#16 | 2014-05-29

US20140145212A1

Electricity

Silicon carbide semiconductor device and method of manufacturing the same

#17 | 2013-06-13

US20130146969A1

Electricity

Switching element and manufacturing method thereof

#18 | 2009-11-05

US20090272983A1

Electricity

Silicon carbide semiconductor device

#19 | 2008-01-17

US20080014702A1

Electricity

Silicon carbide semiconductor device and method for manufacturing the same

#20 | 2006-12-21

US20060284217A1

Electricity

Silicon carbide semiconductor device

#21 | 2006-09-14

US20060205195A1

Electricity

Method of forming an ohmic contact in wide band semiconductor

#22 | 2006-05-11

US20060097268A1

Electricity

Silicon carbide semiconductor device and method for manufacturing the same

#23 | 2006-05-11

US20060097267A1

Electricity

Silicon carbide semiconductor device and method for manufacturing the same

#24 | 2005-07-07

US20050145852A1

Electricity

Gate wiring layout for silicon-carbide-based junction field effect transistor

InventorID:

6093552 ⎘