Benjamin Heying

City:

Fullerton, California

Country:

United States

Published Applications:

Last publication date:

2020-07-23

Top Assignees for applications by Benjamin Heying

The entities that hold a legal rights for patent applications filed by inventor Heying Benjamin:

Benjamin Heying from Fullerton, US has applied for patents for these inventions. The list has both pending applications and granted patents:

Semiconductor devices using insulator-metal phase change materials and method for fabrication

AIN buffer N-polar GaN HEMT profile

Method for fabricating a nitride FET including passivation layers

Composite passivation process for nitride FET

Protective layer in device fabrication

InventorID:

61071 ⎘