Tokyo
Japan
40
2023-05-11
The entities that hold a legal rights for patent applications filed by inventor Tarui Yoichiro:
Yoichiro Tarui from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#2 | 2022-06-23Semiconductor device and method of manufacturing semiconductor device
#3 | 2019-10-10Method of measuring semiconductor device by applying voltage to the semiconductor device using probe needle
#4 | 2019-08-22Silicon carbide semiconductor device
#5 | 2019-03-28Silicon carbide semiconductor device
#6 | 2018-01-18Power semiconductor device
#7 | 2017-08-31Silicon carbide semiconductor device and method for manufacturing same
#8 | 2017-02-23Silicon carbide semiconductor device
#9 | 2016-08-04Silicon carbide semiconductor device with a trench
#10 | 2016-06-23Method for manufacturing silicon carbide semiconductor device
#11 | 2015-11-05Silicon carbide semiconductor device
#12 | 2015-08-27Semiconductor device
#13 | 2015-03-05Silicon carbide semiconductor device
#14 | 2015-01-15Semiconductor device
#15 | 2014-08-28Method of manufacturing semiconductor device
#16 | 2014-07-31SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#17 | 2014-07-10Silicon carbide semiconductor device and method of manufacturing the same
#18 | 2014-03-20Silicon carbide semiconductor device
#19 | 2014-02-06Manufacturing method of silicon carbide semiconductor device
#20 | 2013-11-21Silicon carbide semiconductor device manufacturing method
#21 | 2013-09-12SiC semiconductor device and method of manufacturing the same
#22 | 2013-01-31Silicon carbide semiconductor device
#23 | 2012-11-29Manufacturing method of silicon carbide semiconductor device
#24 | 2012-05-31Silicon carbide semiconductor device
#25 | 2012-05-31Semiconductor device
#26 | 2012-05-10Semiconductor device having a gate insulating film with a thicker portion covering a surface of an epitaxial protrusion and manufacturing method thereof
#27 | 2011-09-15Method of manufacturing silicon carbide semiconductor device
#28 | 2011-08-11Method of manufacturing silicon carbide semiconductor device
#29 | 2011-08-11SiC semiconductor device and method of manufacturing the same
#30 | 2011-04-28Silicon carbide semiconductor device
#31 | 2010-12-16Silicon carbide semiconductor device
#32 | 2009-10-22Semiconductor device and semiconductor device manufacturing method
#33 | 2009-10-08Silicon carbide semiconductor device comprising silicon carbide layer and method of manufacturing the same
#34 | 2009-07-02METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#35 | 2009-06-25NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#36 | 2009-06-04Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contact
#37 | 2009-06-04Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layer
#38 | 2006-06-22Method of manufacturing a SiC vertical MOSFET
#39 | 2006-06-08Semiconductor device having junction termination extension
#40 | 2006-04-18Method of manufacture of a silicon carbide MOSFET including a masking with a tapered shape and implanting ions at an angle
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