Inventor profile of:

Jun Yoshikawa

City:

Nagoya

Country:

Japan

Published Applications:

43

Last publication date:

2024-01-04

Top Assignees for applications by Jun Yoshikawa

The entities that hold a legal rights for patent applications filed by inventor Yoshikawa Jun:

Recent patent applications by Yoshikawa Jun

Jun Yoshikawa from Nagoya, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-01-04
US20240003043A1
Chemistry; metallurgy

COMPOSITE SUBSTRATE, METHOD FOR PRODUCING COMPOSITE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM OXIDE CRYSTAL FILM

#2 | 2023-07-20
US20230231013A1
Electricity

MULTILAYER STRUCTURE

#3 | 2023-04-20
US20230122462A1
Chemistry; metallurgy

Gallium oxide single crystal particle and method for producing the same

#4 | 2022-10-13
US20220328310A1
Electricity

RARE EARTH-CONTAINING SiC SUBSTRATE AND METHOD FOR PRODUCING SiC EPITAXIAL LAYER

#5 | 2022-09-01
US20220278206A1
Electricity

Biaxially oriented SiC composite substrate and semiconductor device composite substrate

#6 | 2022-08-04
US20220246427A1
Electricity

SEMICONDUCTOR FILM

#7 | 2022-07-28
US20220238645A1
Electricity

alpha-Ga2O3 SEMICONDUCTOR FILM

#8 | 2022-05-26
US20220162768A1
Chemistry; metallurgy

Method for producing an α- or β-gallium oxide crystal by bring an aqueous solution including Ga ions into a supercritical state

#9 | 2022-05-19
US20220157946A1
Electricity

Semiconductor film

#10 | 2021-12-30
US20210404090A1
Chemistry; metallurgy

GROUND SUBSTRATE AND METHOD FOR PRODUCING SAME

#11 | 2021-12-30
US20210404089A1
Chemistry; metallurgy

Ground substrate and method for producing same

#12 | 2021-12-09
US20210384300A1
Electricity

SiC composite substrate and composite substrate for semiconductor device

#13 | 2021-12-09
US20210384145A1
Electricity

SiC COMPOSITE SUBSTRATE AND COMPOSITE SUBSTRATE FOR SEMICONDUCTOR DEVICE

#14 | 2021-11-18
US20210355602A1
Chemistry; metallurgy

UNDERLYING SUBSTRATE

#15 | 2021-09-30
US20210301422A1
Chemistry; metallurgy

SiC composite substrate including biaxially oreinted SiC layer and semiconductor device

#16 | 2020-07-09
US20200216364A1
Chemistry; metallurgy

Oriented ceramic sintered body production method and flat sheet

#17 | 2017-05-18
US20170137326A1
Chemistry; metallurgy

Zinc oxide sintered body and method for producing same

#18 | 2017-05-18
US20170137325A1
Chemistry; metallurgy

Mg-containing zinc oxide sintered body and method for producing same

#19 | 2017-03-16
US20170077349A1
Electricity

Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same

#20 | 2017-02-23
US20170053801A1
Electricity

Method for manufacturing p-type zinc oxide film

#21 | 2017-02-16
US20170044022A1
Chemistry; metallurgy

Method for manufacturing hexagonal plate-shaped zinc oxide particles

#22 | 2016-10-06
US20160293800A1
Electricity

Composite substrate for light-emitting element and production method therefor

#23 | 2016-07-07
US20160197234A1
Electricity

Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same

#24 | 2016-06-16
US20160172541A1
Electricity

Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor

#25 | 2016-05-26
US20160145768A1
Chemistry; metallurgy

Zinc oxide free-standing substrate and method for manufacturing same

#26 | 2016-02-18
US20160049469A1
Electricity

Supporting substrate for composite substrate and composite substrate

#27 | 2016-02-11
US20160043261A1
Electricity

Photovoltaic element

#28 | 2015-12-31
US20150380222A1
Electricity

Zinc oxide sputtering target

#29 | 2015-12-31
US20150376024A1
Chemistry; metallurgy

Zinc oxide sputtering target

#30 | 2015-12-24
US20150372191A1
Electricity

Surface light-emission element using zinc oxide substrate

#31 | 2015-05-28
US20150144956A1
Electricity

Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor

#32 | 2015-04-09
US20150099122A1
Chemistry; metallurgy

Zinc oxide powder and process for manufacturing same

#33 | 2014-11-20
US20140338586A1
Chemistry; metallurgy

Method for producing zinc oxide single crystal

#34 | 2014-11-06
US20140328747A1
Electricity

Zinc oxide sputtering target and method for producing same

#35 | 2013-10-10
US20130263771A1
Chemistry; metallurgy

Method for forming a single crystal by spraying the raw material onto a seed substrate

#36 | 2012-05-17
US20120121979A1
Electricity

Lithium secondary battery cathode

#37 | 2012-05-17
US20120121978A1
Electricity

Lithium secondary battery cathode

#38 | 2011-12-22
US20110309291A1
Electricity

Method for producing cathode active material for a lithium secondary battery

#39 | 2006-10-17
US10785774
-

Aluminum nitride materials and members for use in the production of semiconductors

#40 | 2005-07-19
US10417962
-

Aluminum nitride materials and members used for the production of semiconductors

#41 | 2005-07-19
US10308221
-

Aluminum nitride ceramics, members for use in a system for producing semiconductors, and corrosion resistant members

#42 | 2005-04-26
US10306678
-

Aluminum nitride ceramics, members for use in a system for producing semiconductors, corrosion resistant members and conductive members

#43 | 2005-01-20
US20050014628A1
Chemistry; metallurgy

Aluminum nitride sintered body containing carbon fibers and method of manufacturing the same

InventorID:

6108530 ⎘