Inventor profile of:

Munaf RAHIMO

City:

Uezwil

Country:

Switzerland

Published Applications:

49

Last publication date:

2019-09-05

Top Assignees for applications by Munaf RAHIMO

The entities that hold a legal rights for patent applications filed by inventor RAHIMO Munaf:

Recent patent applications by RAHIMO Munaf

Munaf RAHIMO from Uezwil, CH has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2019-09-05
US20190273493A1
Electricity

Switching of paralleled reverse conducting IGBT and wide bandgap switch

#2 | 2018-07-26
US20180212071A1
Electricity

Junction barrier schottky diode with enhanced surge current capability

#3 | 2018-02-15
US20180047652A1
Electricity

Power semiconductor device and method for manufacturing such a power semiconductor device

#4 | 2018-01-25
US20180026623A1
Electricity

Solid state switch system

#5 | 2018-01-25
US20180026570A1
Electricity

Solid state switch system

#6 | 2017-10-19
US20170301607A1
Electricity

Cooling of wide bandgap semiconductor devices

#7 | 2017-10-12
US20170294526A1
Electricity

Reverse-conducting semiconductor device

#8 | 2017-10-12
US20170294435A1
Electricity

Bidirectional power semiconductor

#9 | 2017-09-21
US20170271158A1
Electricity

Method for manufacturing a wide bandgap junction barrier schottky diode

#10 | 2017-08-10
US20170229427A1
Electricity

Semiconductor module and stack arrangement of semiconductor modules

#11 | 2016-10-20
US20160307888A1
Electricity

Reverse-conducting semiconductor device

#12 | 2016-10-13
US20160300904A1
Electricity

Edge termination for semiconductor devices and corresponding fabrication method

#13 | 2016-09-29
US20160284708A1
Electricity

Reverse conducting power semiconductor device

#14 | 2016-02-18
US20160049342A1
Electricity

Module arrangement for power semiconductor devices

#15 | 2016-01-21
US20160020298A1
Electricity

Method for manufacturing an insulated gate bipolar transistor

#16 | 2016-01-14
US20160013302A1
Electricity

Reverse-conducting power semiconductor device

#17 | 2015-12-31
US20150380534A1
Electricity

Power semiconductor device and corresponding module

#18 | 2015-04-23
US20150109031A1
Electricity

RC-IGBT WITH FREEWHEELING SIC DIODE

#19 | 2014-12-18
US20140370665A1
Electricity

POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A POWER SEMICONDUCTOR DEVICE

#20 | 2014-10-30
US20140320178A1
Electricity

Intelligent gate driver for IGBT

#21 | 2014-05-08
US20140124831A1
Electricity

Insulated gate bipolar transistor

#22 | 2014-05-08
US20140124830A1
Electricity

Insulated gate bipolar transistor

#23 | 2014-05-08
US20140124829A1
Electricity

Insulated gate bipolar transistor

#24 | 2014-02-06
US20140034997A1
Electricity

Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device

#25 | 2013-12-19
US20130334566A1
Electricity

Power semiconductor device and method for manufacturing such a power semiconductor device

#26 | 2013-09-05
US20130228823A1
Electricity

Reverse-conducting semiconductor device

#27 | 2013-08-15
US20130207159A1
Electricity

Bipolar non-punch-through power semiconductor device

#28 | 2013-08-15
US20130207157A1
Electricity

Reverse-conducting power semiconductor device

#29 | 2013-04-25
US20130099279A1
Electricity

Power semiconductor device

#30 | 2013-01-31
US20130026537A1
Electricity

Power semiconductor device

#31 | 2012-11-29
US20120299054A1
Electricity

Power semiconductor device

#32 | 2012-11-08
US20120280272A1
Electricity

Punch-through semiconductor device and method for producing same

#33 | 2012-08-09
US20120199954A1
Electricity

Semiconductor device

#34 | 2011-11-17
US20110278694A1
Electricity

Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device

#35 | 2011-08-25
US20110204414A1
Electricity

Reverse-conducting semiconductor device

#36 | 2011-06-09
US20110136300A1
Electricity

Method for producing a semiconductor device using laser annealing for selectively activating implanted dopants

#37 | 2011-05-12
US20110108953A1
Electricity

Fast recovery diode

#38 | 2010-11-25
US20100295093A1
Electricity

Reverse-conducting semiconductor device and method for manufacturing such a reverse-conducting semiconductor device

#39 | 2010-11-04
US20100276727A1
Electricity

Reverse-conducting semiconductor device

#40 | 2010-10-28
US20100270587A1
Electricity

Reverse-conducting semiconductor device and method for manufacturing such a reverse-conducting semiconductor device

#41 | 2010-10-28
US20100270585A1
Electricity

Method for manufacturing a reverse-conducting insulated gate bipolar transistor

#42 | 2010-09-30
US20100248462A1
Electricity

Method for manufacturing a power semiconductor device

#43 | 2010-09-30
US20100244093A1
Electricity

Semiconductor module

#44 | 2010-06-17
US20100151650A1
Electricity

Method for manufacturing a power semiconductor device

#45 | 2008-07-10
US20080164490A1
Electricity

Power semiconductor device

#46 | 2008-04-17
US20080087947A1
Electricity

Cathode cell design

#47 | 2007-12-06
US20070281442A1
Electricity

Power semiconductor

#48 | 2007-07-12
US20070158686A1
Performing operations; transporting

IGBT cathode design with improved safe operating area capability

#49 | 2006-02-02
US20060022261A1
Electricity

Self-aligned production method for an insulated gate semiconductor device cell and insulated gate semiconductor device cell

InventorID:

61182 ⎘