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Inventor profile of:

Yasuo Kanbara

City:

Anan

Country:

Japan

Published Applications:

Last publication date:

2010-07-06

Top Assignees for applications by Yasuo Kanbara

The entities that hold a legal rights for patent applications filed by inventor Kanbara Yasuo:

Nichia Corporation 12 Anan-shi, Japan
AMMONO SP. Z O.O. 12 Warsaw, Poland
AMMONO, Sp. zo.o 5 Warsaw, Poland
NICHIA CORPORATION 3 Anan-shi ,Tokushima, Japan
Nichia Corporation 3 Tokushima, Japan
Nichia Corporation 2 Anan, Japan
Ammono.SP.ZO.O 1 Warsaw, Poland
Ammono Sp. z o.o. 1 Warszawa, Poland
Ammono S.A. 1 Warsaw, Poland
Ammono SP.ZO.O 1 Warsaw, Poland
Ammono Sp. z.o.o. 1 Warszawa, Poland
Ammono SP. ZO. O. 1 Warsaw, Poland

Recent patent applications by Kanbara Yasuo

Yasuo Kanbara from Anan, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2010-07-06

US10493594

Light emitting element structure using nitride bulk single crystal layer

#2 | 2010-06-29

US10682891

Bulk monocrystalline gallium nitride

#3 | 2009-12-24

US20090315012A1

Electricity

Method of preparing light emitting device

#4 | 2008-12-18

US20080311393A1

Chemistry; metallurgy

Substrate for epitaxy and method of preparing the same

#5 | 2008-12-11

US20080303032A1

Chemistry; metallurgy

Bulk mono-crystalline gallium-containing nitride and its application

#6 | 2008-09-09

US10479857

Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate

#7 | 2008-07-03

US20080156254A1

Electricity

Method of obtaining bulk single crystals by seeded growth

#8 | 2008-05-08

US20080108162A1

Chemistry; metallurgy

Method of forming light-emitting device using nitride bulk single crystal layer

#9 | 2008-03-20

US20080067523A1

Electricity

High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof

#10 | 2007-08-07

US10479807

Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride

#11 | 2007-02-22

US20070040240A1

Chemistry; metallurgy

Bulk nitride mono-crystal including substrate for epitaxy

#12 | 2007-01-09

US10147319

Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride

#13 | 2006-11-07

US10493747

Bulk nitride mono-crystal including substrate for epitaxy

#14 | 2006-07-25

US10479856

Method of manufacturing bulk single crystal of gallium nitride

#15 | 2006-06-08

US20060120931A1

Chemistry; metallurgy

Process for obtaining bulk mono-crystalline gallium-containing nitride

#16 | 2006-06-06

US10493746

Nitride semiconductor laser device and manufacturing method thereof

#17 | 2006-03-16

US20060054076A1

Electricity

Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same

#18 | 2006-02-23

US20060037530A1

Chemistry; metallurgy

Process for obtaining bulk mono-crystalline gallium-containing nitride

#19 | 2006-02-16

US20060032428A1

Chemistry; metallurgy

Process for obtaining of bulk monocrystalline gallium-containing nitride

#20 | 2005-11-10

US20050249255A1

Chemistry; metallurgy

Nitride semiconductor laser device and a method for improving its performance

#21 | 2005-04-28

US20050087124A1

Chemistry; metallurgy

Method and equipment for manufacturing aluminum nitride bulk single crystal

InventorID:

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