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Inventor profile of:

Hossein Paravi

City:

Sandy, Utah

Country:

United States

Published Applications:

6

Last publication date:

2013-01-31

Top Assignees for applications by Hossein Paravi

The entities that hold a legal rights for patent applications filed by inventor Paravi Hossein:

  • FAIRCHILD SEMICONDUCTOR CORPORATION 2 San Jose, CA United States
  • Fairchild Semiconductor Corporation 2 South Portland, ME United States

Recent patent applications by Paravi Hossein

Hossein Paravi from Sandy, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-01-31
US20130026563A1
Electricity

STRUCTURES AND METHODS FOR FORMING HIGH DENSITY TRENCH FIELD EFFECT TRANSISTORS

#2 | 2010-03-18
US20100065904A1
Electricity

High density trench field effect transistor

#3 | 2010-01-07
US20100003823A1
Electricity

Method for forming trenches with wide upper portion and narrow lower portion

#4 | 2009-02-26
US20090050958A1
Electricity

SEMICONDUCTOR DEVICE HAVING A SPACER LAYER DOPED WITH SLOWER DIFFUSING ATOMS THAN SUBSTRATE

#5 | 2007-03-15
US20070059906A1
Electricity

SEMICONDUCTOR DEVICE HAVING A SPACER LAYER DOPED WITH SLOWER DIFFUSING ATOMS THAN SUBSTRATE

#6 | 2005-11-24
US20050258481A1
Electricity

Semiconductor device having a spacer layer doped with slower diffusing atoms than substrate

InventorID:

61232 ⎘

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