Shanghai
China
23
2023-03-09
The entities that hold a legal rights for patent applications filed by inventor Wu Dongping:
Dongping Wu from Shanghai, CN has applied for patents for these inventions. The list has both pending applications and granted patents:
Touch Operation Method and Device
#2 | 2016-06-30Transistor and method of making
#3 | 2016-03-17PREPARATION METHOD OF SEMICONDUCTOR DEVICE
#4 | 2014-10-23Semiconductor device and method of making
#5 | 2014-10-16Ultra-shallow junction semiconductor field-effect transistor and method of making
#6 | 2014-09-25Metal silicide thin film, ultra-shallow junctions, semiconductor device and method of making
#7 | 2014-09-11Semiconductor device and method of making
#8 | 2014-02-20Asymmetrical gate MOS device and method of making
#9 | 2014-02-06Asymmetric Gate MOS Device and Method of Making
#10 | 2014-02-06Nano-MOS Devices and Method of Making
#11 | 2014-01-09Method of Making Metal/Semiconductor Compound Thin Film
#12 | 2014-01-09Metal/Semiconductor Compound Thin Film and a DRAM Storage Cell and Method of Making
#13 | 2014-01-09Super-Long Semiconductor Nano-Wire Structure and Method of Making
#14 | 2013-11-07METHOD FOR MAKING FIELD EFFECT TRANSISTOR
#15 | 2013-10-17Schottky junction source/drain transistor and method of making
#16 | 2013-06-06Field-Effect Transistor and Method of Making
#17 | 2013-05-23Dynamic Random Access Memory Array and Method of Making
#18 | 2013-02-07Asymmetric source-drain field-effect transistor having a mixed schottky/P-N junction and method of making
#19 | 2013-01-31Body contact SOI transistor structure and method of making
#20 | 2012-11-22Mixed Schottky/P-N Junction Diode and Method of Making
#21 | 2012-10-25Floating-gate nonvolatile semiconductor memory device and method of making
#22 | 2012-05-17Mixed Junction Source/Drain Field-Effect-Transistor and Method of Making the Same
#23 | 2011-12-29Method of making a charge trapping non-volatile semiconductor memory device
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