Itami
Japan
16
2021-08-05
The entities that hold a legal rights for patent applications filed by inventor Kawase Tomohiro:
Tomohiro Kawase from Itami, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
Crystal and substrate of conductive GaAs, and method for forming the same
#2 | 2018-09-13Crystal and substrate of conductive GaAs, and method for forming the same
#3 | 2018-01-11Growth container
#4 | 2016-08-18Silicon carbide ingot and method for manufacturing silicon carbide substrate
#5 | 2016-06-02Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate
#6 | 2015-01-08Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate
#7 | 2014-10-02Ingot, silicon carbide substrate, and method for producing ingot
#8 | 2013-01-10Method of producing semiconductor single crystal
#9 | 2012-05-10Method and apparatus for producing semiconductor crystal, and semiconductor crystal
#10 | 2011-10-27III-nitride crystal substrate and III-nitride semiconductor device
#11 | 2010-09-02AlN crystal and method for growing the same, and AlN crystal substrate
#12 | 2010-06-17III-nitride single-crystal growth method
#13 | 2009-12-24III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device
#14 | 2009-05-21Group III nitride semiconductor crystal substrate and semiconductor device
#15 | 2007-05-10Indium phosphide substrate and indium phosphide monocrystal and method of manufacturing thereof
#16 | 2005-03-15Large size semiconductor crystal with low dislocation density
6138989 ⎘