Hitoshi Takeda

City:

Ichihara

Country:

Japan

Published Applications:

Last publication date:

2009-04-23

Top Assignees for applications by Hitoshi Takeda

The entities that hold a legal rights for patent applications filed by inventor Takeda Hitoshi:

Hitoshi Takeda from Ichihara, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

Gallium nitride-based compound semiconductor multilayer structure and production method thereof

P-type Group III nitride semiconductor and production method thereof

N-type group III nitride semiconductor stacked layer structure

Group III nitride semiconductor light emitting device

Gallium nitride-based compound semiconductor multilayer structure and production method thereof

Gallium nitride-based compound semiconductor multilayer structure and production method thereof

Production method of gallium nitride-based compound semiconductor multilayer structure

InventorID:

6141317 ⎘