Itami
Japan
12
2013-11-07
The entities that hold a legal rights for patent applications filed by inventor Kasai Hitoshi:
Hitoshi Kasai from Itami, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
GaN-crystal free-standing substrate and method for producing the same
#2 | 2012-02-09GaN-crystal free-standing substrate and method for producing the same
#3 | 2011-03-17Fabrication method and fabrication apparatus of group III nitride crystal substance
#4 | 2010-08-19Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same
#5 | 2010-03-11Nitride semiconductor light emitting device and method for forming the same
#6 | 2010-01-14Fabrication method and fabrication apparatus of group III nitride crystal substance
#7 | 2009-08-27Group-III nitride light-emitting device
#8 | 2008-12-18GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate
#9 | 2008-12-04Semiconductor light-emitting element and substrate used in formation of the same
#10 | 2008-07-17Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same
#11 | 2007-10-04GaN crystal substrate
#12 | 2007-06-28Fabrication method and fabrication apparatus of group III nitride crystal substance
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