Inventor profile of:

Wei-Chieh Lin

City:

Hsinchu

Country:

Taiwan

Published Applications:

24

Last publication date:

2024-06-27

Top Assignees for applications by Wei-Chieh Lin

The entities that hold a legal rights for patent applications filed by inventor Lin Wei-Chieh:

Recent patent applications by Lin Wei-Chieh

Wei-Chieh Lin from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-06-27
US20240210995A1
Physics

Stretchable Display

#2 | 2017-12-21
US20170365708A1
Electricity

Trench power semiconductor device

#3 | 2017-10-24
US15358182
Electricity

Trenched power semiconductor element

#4 | 2017-07-27
US20170213906A1
Electricity

Trench power transistor

#5 | 2017-07-13
US20170200822A1
Electricity

Double gate trench power transistor and manufacturing method thereof

#6 | 2012-08-02
US20120193701A1
Electricity

Power semiconductor device with electrostatic discharge structure

#7 | 2012-06-14
US20120146138A1
Electricity

Power device with low parasitic transistor and method of making the same

#8 | 2012-06-07
US20120139037A1
Electricity

Depletion mode semiconductor device with trench gate and manufacturing method thereof

#9 | 2012-05-24
US20120126328A1
Electricity

Semiconductor device

#10 | 2012-03-08
US20120056277A1
Electricity

Semiconductor device integrated with converter and package structure thereof

#11 | 2012-03-01
US20120049263A1
Electricity

Semiconductor device having extra capacitor structure

#12 | 2011-12-01
US20110291183A1
Electricity

Power semiconductor device having low gate input resistance

#13 | 2011-11-17
US20110278671A1
Electricity

Laterally diffused metal-oxide-semiconductor device

#14 | 2011-09-08
US20110215374A1
Electricity

Power semiconductor device having adjustable output capacitance

#15 | 2011-04-14
US20110084335A1
Electricity

Semiconductor device with drain voltage protection for ESD

#16 | 2011-04-07
US20110079819A1
Electricity

IGBT with fast reverse recovery time rectifier and manufacturing method thereof

#17 | 2011-03-17
US20110062513A1
Electricity

Overlapping trench gate semiconductor device

#18 | 2010-12-02
US20100301386A1
Electricity

Fabricating method for forming integrated structure of IGBT and diode

#19 | 2010-11-18
US20100289075A1
Electricity

Method of manufacturing semiconductor device having integrated MOSFET and Schottky diode

#20 | 2010-11-11
US20100285646A1
Electricity

Method of fabricating power semiconductor device

#21 | 2010-10-14
US20100258853A1
Electricity

Trench semiconductor device and method of making the same

#22 | 2010-08-26
US20100216290A1
Electricity

Method for forming semiconductor device

#23 | 2010-05-13
US20100117142A1
Electricity

Semiconductor device for improving the peak induced voltage in switching converter

#24 | 2010-03-04
US20100055857A1
Electricity

Method of forming a power device

InventorID:

6179482 ⎘