Naofumi Shinya

City:

Echizen

Country:

Japan

Published Applications:

Last publication date:

2023-03-16

Top Assignees for applications by Naofumi Shinya

The entities that hold a legal rights for patent applications filed by inventor Shinya Naofumi:

Naofumi Shinya from Echizen, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

Method for producing SiC single crystal and method for suppressing dislocations in SiC single crystal

Method for preparing SiC single crystal

Negative electrode material for lithium ion batteries

Method for manufacturing a surface-treated silicon substrate for magnetic recording medium

InventorID:

6190381 ⎘