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Inventor profile of:

Narumasa Soejima

City:

Seto

Country:

Japan

Published Applications:

Last publication date:

2017-03-23

Top Assignees for applications by Narumasa Soejima

The entities that hold a legal rights for patent applications filed by inventor Soejima Narumasa:

TOYOTA JIDOSHA KABUSHIKI KAISHA 18 Toyota-shi, Japan
DENSO CORPORATION 17 Kariya, Japan
DENSO CORPORATION 8 Kariya-city, Japan
TOYOTA JIDOSHA KABUSHIKI KAISHA 8 Toyota, Japan
TOYOTA JIDOSHA KABUSHIKI KAISHA 7 Toyota-shi, Aichi-ken, Japan
TOYOTA JIDOSHA KABUSHIKI KAISHA 6 Toyota-city, Japan
DENSO CORPORATION 3 Kariya-shi, Japan
DENSO CORPORATION 2 Kariya-city, Aichi-pref., Japan
DENSO CORPORATION 2 Kariya-shi, Aichi-ken, Japan
TOYOTA JIDOSHA KABUSHIKI KAISHA 1 Aichi-pref., Japan

Recent patent applications by Soejima Narumasa

Narumasa Soejima from Seto, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2017-03-23

US20170084735A1

Electricity

Silicon carbide semiconductor device and method for producing the same

#2 | 2016-12-01

US20160351680A1

Electricity

Method for manufacturing insulated gate type switching device having low-density body region and high-density body region

#3 | 2016-06-09

US20160163818A1

Electricity

Silicon carbide semiconductor device and method for producing the same

#4 | 2016-01-07

US20160005861A1

Electricity

Semiconductor device and manufacturing method of semiconductor device

#5 | 2015-08-20

US20150236127A1

Electricity

Silicon carbide semiconductor device and method of manufacturing the same

#6 | 2015-07-30

US20150214052A1

Electricity

Semiconductor device and manufacturing method of semiconductor device

#7 | 2015-05-14

US20150129895A1

Electricity

Silicon carbide semiconductor device and method for producing the same

#8 | 2015-04-30

US20150115286A1

Electricity

Silicon carbide semiconductor device and method for producing the same

#9 | 2015-02-19

US20150048382A1

Electricity

Silicon carbide semiconductor device including conductivity layer in trench

#10 | 2014-12-04

US20140353683A1

Electricity

Semiconductor device and method of manufacturing the same

#11 | 2014-09-11

US20140252465A1

Electricity

Semiconductor device having vertical MOSFET structure that utilizes a trench-type gate electrode and method of producing the same

#12 | 2014-07-03

US20140183620A1

Electricity

Semiconductor device

#13 | 2014-06-26

US20140175518A1

Electricity

III-V HEMT devices

#14 | 2014-06-12

US20140162443A1

Electricity

Method for producing semiconductor device

#15 | 2014-06-12

US20140159705A1

Physics

Wafer examination device and wafer examination method

#16 | 2014-04-10

US20140097490A1

Electricity

Semiconductor device

#17 | 2013-06-13

US20130146969A1

Electricity

Switching element and manufacturing method thereof

#18 | 2013-01-03

US20130001592A1

Electricity

Silicon carbide semiconductor device

#19 | 2012-11-01

US20120273801A1

Electricity

Silicon carbide semiconductor device

#20 | 2012-06-28

US20120161154A1

Electricity

Silicon carbide semiconductor device and manufacturing method of the same

#21 | 2012-06-07

US20120142173A1

Electricity

Manufacturing method of silicon carbide single crystal

#22 | 2012-03-15

US20120061682A1

Electricity

SIC semiconductor device and method for manufacturing the same

#23 | 2011-12-22

US20110309464A1

Electricity

Semiconductor device including cell region and peripheral region having high breakdown voltage structure

#24 | 2011-12-01

US20110291110A1

Electricity

Silicon carbide semiconductor device and method of manufacturing the same

#25 | 2011-08-25

US20110207321A1

Electricity

Semiconductor device manufacturing method

#26 | 2010-11-25

US20100295098A1

Electricity

III-V HEMT devices

#27 | 2008-03-27

US20080073652A1

Electricity

III-V hemt devices

InventorID:

6194934 ⎘