Gilbert, Arizona
United States
42
2021-05-06
The entities that hold a legal rights for patent applications filed by inventor Rizzo Nicholas D.:
Nicholas D. Rizzo from Gilbert, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof
#2 | 2020-09-24Skyrmion stack memory device
#3 | 2020-09-17Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof
#4 | 2020-08-13Skyrmion stack memory device
#5 | 2019-04-25Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof
#6 | 2018-01-25Methods of manufacturing magnetoresistive MTJ stacks having an unpinned, fixed synthetic anti-ferromagnetic structure
#7 | 2016-10-27Magnetoresistive MTJ stack having an unpinned, fixed synthetic anti-ferromagnetic structure
#8 | 2015-10-01MRAM having an unpinned, fixed synthetic anti-ferromagnetic structure
#9 | 2015-01-22MRAM synthetic anitferomagnet structure
#10 | 2014-01-23MRAM synthetic anitferomagnet structure
#11 | 2012-05-17Electronic device including a magneto-resistive memory device and a process for forming the electronic device
#12 | 2011-03-17Magnetic element having reduced current density
#13 | 2010-11-04Method for reducing current density in a magnetoelectronic device
#14 | 2010-08-05Structure and method for fabricating cladded conductive lines in magnetic memories
#15 | 2010-06-17MAGNETIC TUNNEL JUNCTION STACK
#16 | 2009-04-16Magnetic element having reduced current density
#17 | 2009-04-02Electronic device including a magneto-resistive memory device and a process for forming the electronic device
#18 | 2008-10-23Spin-transfer MRAM structure and methods
#19 | 2008-08-28MRAM FREE LAYER SYNTHETIC ANTIFERROMAGNET STRUCTURE AND METHODS
#20 | 2008-04-24Magnetic tunnel junction memory and method with etch-stop layer
#21 | 2008-02-28Spin-transfer based MRAM with reduced critical current density
#22 | 2008-01-24Low power magnetoelectronic device structures utilizing enhanced permeability materials
#23 | 2007-12-13Enhanced permeability device structures and method
#24 | 2007-12-06MRAM synthetic antiferromagnet structure
#25 | 2007-10-11Oscillator and method of manufacture
#26 | 2007-08-16Method of manufacturing a magnetoelectronic device
#27 | 2007-02-27Magneto resistance random access memory element
#28 | 2007-02-15Low power magnetoresistive random access memory elements
#29 | 2006-11-02Triple pulse method for MRAM toggle bit characterization
#30 | 2006-08-24Low power magnetoelectronic device structures utilizing enhanced permeability materials
#31 | 2006-05-25Reduced power magnetoresistive random access memory elements
#32 | 2006-04-27Spin-transfer based MRAM using angular-dependent selectivity
#33 | 2005-12-01Method of applying cladding material on conductive lines of MRAM devices
#34 | 2005-10-18MRAM element and methods for writing the MRAM element
#35 | 2005-08-30Magnetic shielding for electronic circuits which include magnetic materials
#36 | 2005-08-09Method of applying cladding material on conductive lines of MRAM devices
#37 | 2005-07-21Cladded conductor for use in a magnetoelectronics device and method for fabricating the same
#38 | 2005-07-14Synthetic antiferromagnetic structure for magnetoelectronic devices
#39 | 2005-06-21MRAM and methods for reading the MRAM
#40 | 2005-05-24Synthetic antiferromagnetic structure for magnetoelectronic devices
#41 | 2005-05-03MRAM architecture
#42 | 2005-04-26Cladded conductor for use in a magnetoelectronics device and method for fabricating the same
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