Tempe, Arizona
United States
30
2015-10-01
The entities that hold a legal rights for patent applications filed by inventor Slaughter Jon M.:
Jon M. Slaughter from Tempe, US has applied for patents for these inventions. The list has both pending applications and granted patents:
MRAM having an unpinned, fixed synthetic anti-ferromagnetic structure
#2 | 2015-01-22MRAM synthetic anitferomagnet structure
#3 | 2014-01-23MRAM synthetic anitferomagnet structure
#4 | 2011-05-26Two-axis magnetic field sensor with multiple pinning directions
#5 | 2010-11-04Method for reducing current density in a magnetoelectronic device
#6 | 2010-11-04Two-axis magnetic field sensor with substantially orthogonal pinning directions
#7 | 2010-08-26Magnetic field sensing device
#8 | 2009-11-12Two-axis magnetic field sensor with multiple pinning directions
#9 | 2009-08-27Magnetic tunnel junction device
#10 | 2009-05-14METHODS AND STRUCTURES FOR EXCHANGE-COUPLED MAGNETIC MULTI-LAYER STRUCTURE WITH IMPROVED OPERATING TEMPERATURE BEHAVIOR
#11 | 2009-02-19METHODS AND APPARATUS FOR A SYNTHETIC ANTI-FERROMAGNET STRUCTURE WITH IMPROVED THERMAL STABILITY
#12 | 2008-08-28MRAM FREE LAYER SYNTHETIC ANTIFERROMAGNET STRUCTURE AND METHODS
#13 | 2008-05-15Magnetic tunnel junction structure and method
#14 | 2008-01-24Low power magnetoelectronic device structures utilizing enhanced permeability materials
#15 | 2007-12-13Enhanced permeability device structures and method
#16 | 2007-12-06MRAM synthetic antiferromagnet structure
#17 | 2007-10-18Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence
#18 | 2007-08-02Magnetic tunnel junction device with improved barrier layer
#19 | 2006-08-24Low power magnetoelectronic device structures utilizing enhanced permeability materials
#20 | 2006-08-22Multi-state magnetoresistance random access cell with improved memory storage density
#21 | 2006-03-09Magnetoresistive random access memory with reduced switching field variation
#22 | 2006-01-26Multi-state magnetoresistance random access cell with improved memory storage density
#23 | 2006-01-26Magnetic tunnel junction element structures and methods for fabricating the same
#24 | 2005-11-10Synthetic antiferromagnet structures for use in MTJs in MRAM technology
#25 | 2005-07-14Synthetic antiferromagnetic structure for magnetoelectronic devices
#26 | 2005-06-23Synthetic antiferromagnet structures for use in MTJs in MRAM technology
#27 | 2005-06-02Method of making amorphous alloys for semiconductor device
#28 | 2005-05-24Synthetic antiferromagnetic structure for magnetoelectronic devices
#29 | 2005-03-03Method of writing to a multi-state magnetic random access memory cell
#30 | 2005-03-03Magnetoresistive random access memory with reduced switching field variation
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