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Inventor profile of:

Takamichi Sumitomo

City:

Itami

Country:

Japan

Published Applications:

40

Last publication date:

2013-07-11

Top Assignees for applications by Takamichi Sumitomo

The entities that hold a legal rights for patent applications filed by inventor Sumitomo Takamichi:

SUMITOMO ELECTRIC INDUSTRIES, LTD. 40 Osaka-shi, Japan
Sony Corporation 4 Tokyo, Japan
Sumitomo Electric Industries, Ltd. 1 Osaka-shi, Osaka, Japan
Sumitomo Electronic Industries, Ltd. 1 Osaka-shi, Japan

Recent patent applications by Sumitomo Takamichi

Takamichi Sumitomo from Itami, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-07-11

US20130177035A1

Nitride semiconductor laser, epitaxial substrate

#2 | 2013-02-28

US20130051417A1

Performing operations; transporting

Group III nitride semiconductor light emitting device

#3 | 2012-11-29

US20120299010A1

Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device

#4 | 2012-10-25

US20120269222A1

Nitride semiconductor laser and epitaxial substrate

#5 | 2012-10-25

US20120269220A1

III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser device

#6 | 2012-10-11

US20120258557A1

Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrate

#7 | 2012-08-09

US20120202304A1

Performing operations; transporting

III-nitride semiconductor laser device, and method of fabricating the III-nitride semiconductor laser device

#8 | 2012-06-07

US20120142130A1

Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device

#9 | 2012-05-17

US20120119240A1

Nitride semiconductor light emitting device

#10 | 2012-05-10

US20120114002A1

Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode

#11 | 2012-05-10

US20120112204A1

Nitride semiconductor light emitting device and epitaxial substrate

#12 | 2012-05-10

US20120112203A1

Group-III nitride semiconductor device, method for fabricating Group-III nitride semiconductor device, and epitaxial substrate

#13 | 2012-04-12

US20120088326A1

Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device

#14 | 2012-04-12

US20120086015A1

Group III nitride semiconductor device and epitaxial substrate

#15 | 2012-03-15

US20120061643A1

GaN-based semiconductor light emitting device and the method for making the same

#16 | 2012-03-08

US20120058583A1

Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device

#17 | 2012-01-12

US20120008660A1

III-nitride semiconductor laser, and method for fabricating III-nitride semiconductor laser

#18 | 2011-12-22

US20110309328A1

Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting device

#19 | 2011-10-06

US20110241016A1

Nitride-based semiconductor light-emitting element

#20 | 2011-09-22

US20110227035A1

Nitride-based semiconductor light-emitting device

#21 | 2011-09-15

US20110223701A1

Method of fabricating group III nitride semiconductor device

#22 | 2011-09-01

US20110210378A1

High electron mobility transistor, epitaxial wafer, and method of fabricating high electron mobility transistor

#23 | 2011-07-28

US20110180805A1

Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device

#24 | 2011-07-21

US20110175201A1

Group III nitride semiconductor device

#25 | 2011-07-07

US20110164637A1

Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device

#26 | 2011-05-26

US20110121265A1

Group III nitride semiconductor optical device

#27 | 2011-03-31

US20110076788A1

Performing operations; transporting

Method of making semiconductor light-emitting device

#28 | 2011-03-10

US20110058585A1

Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device

#29 | 2011-03-10

US20110057200A1

Group III nitride semiconductor device and epitaxial substrate

#30 | 2011-03-10

US20110057167A1

Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device

#31 | 2011-02-24

US20110042644A2

Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device

#32 | 2011-01-20

US20110013657A1

Gallium nitride-based semiconductor laser diode

#33 | 2011-01-20

US20110013656A1

Group III nitride semiconductor laser diode

#34 | 2011-01-20

US20110012126A1

Nitride-based semiconductor light emitting device

#35 | 2010-12-23

US20100322276A1

Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device

#36 | 2010-11-25

US20100297784A1

Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device

#37 | 2010-09-16

US20100230690A1

Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device

#38 | 2010-08-26

US20100213439A1

Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device

#39 | 2010-03-04

US20100055820A1

Method for producing nitride semiconductor optical device and epitaxial wafer

#40 | 2010-01-14

US20100009484A1

Method of fabricating quantum well structure

InventorID:

6206590 ⎘