Sinying
Taiwan
14
2016-06-30
The entities that hold a legal rights for patent applications filed by inventor Ko Hsiang Hsiang:
Hsiang Hsiang Ko from Sinying, TW has applied for patents for these inventions. The list has both pending applications and granted patents:
Surface tension modification using silane with hydrophobic functional group for thin film deposition
#2 | 2016-06-23Semiconductor device
#3 | 2015-06-25Two-step shallow trench isolation (STI) process
#4 | 2014-09-18Interface for metal gate integration
#5 | 2014-09-18Interface for metal gate integration
#6 | 2014-08-28Semiconductor device
#7 | 2014-07-10Dual damascene metal gate
#8 | 2014-06-26Two-step shallow trench isolation (STI) process
#9 | 2014-02-27Two-step shallow trench isolation (STI) process
#10 | 2013-11-07Method of manufacturing semiconductor device
#11 | 2013-10-03Surface tension modification using silane with hydrophobic functional group for thin film deposition
#12 | 2013-08-01Apparatus and method for reducing dark current in image sensors
#13 | 2013-02-28Semiconductor devices utilizing partially doped stressor film portions and methods for forming the same
#14 | 2012-11-22Stressed semiconductor device and method of manufacturing
6289639 ⎘