Nagoya
Japan
15
2022-10-13
The entities that hold a legal rights for patent applications filed by inventor Matsushima Kiyoshi:
Kiyoshi Matsushima from Nagoya, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
RARE EARTH-CONTAINING SiC SUBSTRATE AND METHOD FOR PRODUCING SiC EPITAXIAL LAYER
#2 | 2022-09-01Biaxially oriented SiC composite substrate and semiconductor device composite substrate
#3 | 2021-12-09SiC composite substrate and composite substrate for semiconductor device
#4 | 2021-12-09SiC COMPOSITE SUBSTRATE AND COMPOSITE SUBSTRATE FOR SEMICONDUCTOR DEVICE
#5 | 2021-09-30SiC composite substrate including biaxially oreinted SiC layer and semiconductor device
#6 | 2020-07-09Oriented ceramic sintered body production method and flat sheet
#7 | 2018-08-30Method for producing transparent alumina sintered body
#8 | 2018-08-16Alumina sintered body and base substrate for optical device
#9 | 2018-06-28Oriented alumina substrate for epitaxial growth
#10 | 2018-06-28Oriented alumina substrate for epitaxial growth
#11 | 2018-02-15Alumina sintered body and base substrate for optical device
#12 | 2017-06-22Alumina sintered body and base substrate for optical device
#13 | 2017-06-15Method for producing transparent alumina sintered body
#14 | 2014-12-25Silicon carbide porous material, honeycomb structure and electric heating-type catalyst carrier
#15 | 2014-01-09Silicon carbide porous body, honeycomb structure, and electric heating type catalyst carrier
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