Inventor profile of:

Yusuke Tsukada

City:

Ushiku

Country:

Japan

Published Applications:

11

Last publication date:

2023-08-10

Top Assignees for applications by Yusuke Tsukada

The entities that hold a legal rights for patent applications filed by inventor Tsukada Yusuke:

Recent patent applications by Tsukada Yusuke

Yusuke Tsukada from Ushiku, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-08-10
US20230253461A1
Electricity

Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device

#2 | 2021-09-02
US20210273058A1
Electricity

Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device

#3 | 2020-10-08
US20200321438A1
Electricity

Gallium nitride substrate and manufacturing method of nitride semiconductor crystal

#4 | 2020-01-09
US20200013860A1
Electricity

Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device

#5 | 2019-10-10
US20190312111A1
Electricity

Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device

#6 | 2018-11-22
US20180334758A1
Chemistry; metallurgy

GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device

#7 | 2017-12-21
US20170362739A1
Chemistry; metallurgy

GaN substrate

#8 | 2017-07-13
US20170200789A1
Electricity

Gallium nitride substrate and manufacturing method of nitride semiconductor crystal

#9 | 2016-11-03
US20160319460A1
Chemistry; metallurgy

GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device

#10 | 2016-08-11
US20160233306A1
Electricity

Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device

#11 | 2015-10-29
US20150311068A1
Electricity

Gallium nitride substrate and manufacturing method of nitride semiconductor crystal

InventorID:

6428073 ⎘