Masayoshi Doi

City:

Nagoya

Country:

Japan

Published Applications:

Last publication date:

2018-11-01

Top Assignees for applications by Masayoshi Doi

The entities that hold a legal rights for patent applications filed by inventor Doi Masayoshi:

Masayoshi Doi from Nagoya, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

SiC single crystal production method and production apparatus

Method for producing SiC single crystal

Method for producing SiC single crystal

InventorID:

6469500 ⎘