Fremont, California
United States
19
2018-08-23
The entities that hold a legal rights for patent applications filed by inventor Wang Xiaobin:
Xiaobin Wang from Fremont, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Selector device having asymmetric conductance for memory applications
#2 | 2018-03-15Method for sensing memory element coupled to selector device
#3 | 2017-11-23Selector device incorporating conductive clusters for memory applications
#4 | 2017-10-05MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
#5 | 2017-08-17Spin-orbitronics device and applications thereof
#6 | 2016-07-14Magnetic random access memory with tri-layer reference layer
#7 | 2016-03-03Spin-orbitronics device and applications thereof
#8 | 2015-11-19Voltage-switched magnetic random access memory (MRAM) and method for using the same
#9 | 2015-11-12Magnetic memory element with composite fixed layer
#10 | 2015-10-29Magnetic random access memory with ultrathin reference layer
#11 | 2015-10-29Magnetic random access memory with ultrathin reference layer
#12 | 2015-10-20Magnetic random access memory with multiple free layers
#13 | 2015-10-08Magnetic random access memory with perpendicular enhancement layer
#14 | 2015-09-24Magnetic random access memory element having tantalum perpendicular enhancement layer
#15 | 2015-06-18Magnetic random access memory with perpendicular enhancement layer
#16 | 2015-04-16Magnetic tunnel junction with perpendicular enhancement layer and thin reference layer
#17 | 2015-04-16Magnetic random access memory with perpendicular enhancement layer
#18 | 2014-07-03Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layer
#19 | 2014-02-13Magnetic random access memory having perpendicular enhancement layer
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