Fishkill, New York
United States
10
2018-02-15
The entities that hold a legal rights for patent applications filed by inventor Qi Yi:
Yi Qi from Fishkill, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Transistor device structures with retrograde wells in CMOS applications
#2 | 2016-02-04Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures
#3 | 2015-09-03Blanket EPI super steep retrograde well formation without Si recess
#4 | 2015-02-26Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device
#5 | 2014-12-18Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures
#6 | 2014-07-17Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device
#7 | 2014-07-03Blanket EPI super steep retrograde well formation without Si recess
#8 | 2014-06-12METHOD AND STRUCTURE FOR TRANSISTOR WITH REDUCED DRAIN-INDUCED BARRIER LOWERING AND ON RESISTANCE
#9 | 2014-03-13METHOD OF TAILORING SILICON TRENCH PROFILE FOR SUPER STEEP RETROGRADE WELL FIELD EFFECT TRANSISTOR
#10 | 2014-02-13METHODS OF MAKING STRESSED MATERIAL LAYERS AND A SYSTEM FOR FORMING SUCH LAYERS
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