Inventor profile of:

Samuel C. Pan

City:

Hsinchu

Country:

Taiwan

Published Applications:

53

Last publication date:

2024-11-28

Top Assignees for applications by Samuel C. Pan

The entities that hold a legal rights for patent applications filed by inventor Pan Samuel C.:

Recent patent applications by Pan Samuel C.

Samuel C. Pan from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-11-28
US20240395936A1
Electricity

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

#2 | 2023-11-16
US20230369487A1
Electricity

Semiconductor device and manufacturing method thereof

#3 | 2022-12-01
US20220384581A1
Electricity

Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier height

#4 | 2021-11-04
US20210343866A1
Electricity

Semiconductor device and manufacturing method thereof

#5 | 2021-09-16
US20210288110A1
Electricity

Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same

#6 | 2021-06-24
US20210193667A1
Electricity

Semiconductor memory device

#7 | 2021-02-04
US20210036111A1
Electricity

Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier height

#8 | 2021-01-07
US20210005719A1
Electricity

2D crystal hetero-structures and manufacturing methods thereof

#9 | 2020-09-03
US20200279924A1
Electricity

Device with doped phosphorene and method for doping phosphorene

#10 | 2020-08-20
US20200266059A1
Electricity

Method of forming a semiconductor device using layered etching and repairing of damaged portions

#11 | 2020-04-30
US20200135926A1
Electricity

Method for forming stressor, semiconductor device having stressor, and method for forming the same

#12 | 2020-04-30
US20200135925A1
Electricity

Method for forming stressor, semiconductor device having stressor, and method for forming the same

#13 | 2020-04-30
US20200135809A1
Electricity

Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same

#14 | 2020-04-16
US20200119204A1
Electricity

Impact ionization semiconductor device and manufacturing method thereof

#15 | 2020-04-16
US20200118883A1
Electricity

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

#16 | 2020-04-16
US20200118882A1
Electricity

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

#17 | 2020-04-02
US20200105943A1
Electricity

Impact ionization semiconductor device and manufacturing method thereof

#18 | 2020-03-26
US20200098917A1
Electricity

Semiconductor device and manufacturing method thereof

#19 | 2020-03-12
US20200083454A1
Electricity

Methods of graphene growth and related structures

#20 | 2020-02-13
US20200051988A1
Electricity

Antifuse array and method of forming antifuse using anodic oxidation

#21 | 2019-11-28
US20190363089A1
Electricity

Semiconductor memory device

#22 | 2019-10-24
US20190326178A1
Electricity

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

#23 | 2019-10-10
US20190312132A1
Electricity

Semiconductor device and manufacturing method thereof

#24 | 2019-08-29
US20190267548A1
Electricity

Methods of graphene growth and related structures

#25 | 2019-08-15
US20190252554A1
Electricity

Multi-channel field effect transistors using 2D-material

#26 | 2019-08-01
US20190237328A1
Electricity

Method of forming a semiconductor device using layered etching and repairing of damaged portions

#27 | 2019-05-16
US20190148499A1
Electricity

Device with doped phosphorene and method for doping phosphorene

#28 | 2019-04-04
US20190103441A1
Electricity

Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same

#29 | 2019-02-28
US20190067456A1
Electricity

Semiconductor device and manufacturing method thereof

#30 | 2019-01-03
US20190006470A1
Electricity

Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier height

#31 | 2019-01-03
US20190006241A1
Electricity

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

#32 | 2018-10-25
US20180308851A1
Electricity

Semiconductor memory device

#33 | 2018-09-20
US20180269291A1
Electricity

2D crystal hetero-structures and manufacturing methods thereof

#34 | 2018-09-20
US20180269059A1
Electricity

Method of forming a semiconductor device using layered etching and repairing of damaged portions

#35 | 2018-08-02
US20180219019A1
Electricity

Antifuse array and method of forming antifuse using anodic oxidation

#36 | 2018-08-02
US20180218903A1
Electricity

Charged-particle-beam patterning without resist

#37 | 2018-07-26
US20180212151A1
Electricity

Methods of graphene growth and related structures

#38 | 2018-06-14
US20180166582A1
Electricity

Semiconductor device and manufacturing methods thereof

#39 | 2018-05-31
US20180151755A1
Electricity

Impact ionization semiconductor device and manufacturing method thereof

#40 | 2018-05-31
US20180151734A1
Electricity

Semiconductor device and manufacturing method thereof

#41 | 2018-02-01
US20180033889A1
Electricity

Method for forming stressor, semiconductor device having stressor, and method for forming the same

#42 | 2017-11-30
US20170346010A1
Electricity

Methods of graphene growth and related structures

#43 | 2017-07-06
US20170194464A1
Electricity

Three-dimensional transistor and methods of manufacturing thereof

#44 | 2017-06-01
US20170154975A1
Electricity

Graphene transistor and related methods

#45 | 2017-05-18
US20170141235A1
Electricity

Negative capacitance field effect transistor with charged dielectric material

#46 | 2017-05-04
US20170125415A1
Electricity

FinFET semiconductor device having fins with stronger structural strength

#47 | 2017-02-21
US14994718
Electricity

Structure and formation method of semiconductor device structure

#48 | 2016-12-29
US20160380098A1
Electricity

Double exponential mechanism controlled transistor

#49 | 2016-10-20
US20160307894A1
Electricity

FinFET semiconductor device having fins with stronger structural strength

#50 | 2016-04-07
US20160099172A1
Electricity

Methods of forming an interconnect structure using a self-ending anodic oxidation

#51 | 2015-10-01
US20150279846A1
Electricity

Antifuse array and method of forming antifuse using anodic oxidation

#52 | 2014-02-20
US20140049281A1
Physics

Diagnosis framework to shorten yield learning cycles of advanced processes

#53 | 2005-04-19
US10790994
-

Erasing method for non-volatile memory

InventorID:

656139 ⎘