Austin, Texas
United States
33
2014-09-11
The entities that hold a legal rights for patent applications filed by inventor Grudowski Paul A.:
Paul A. Grudowski from Austin, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Gate security feature
#2 | 2014-02-27Semiconductor device including an active region and two layers having different stress characteristics
#3 | 2011-09-01MULTILAYER SILICON NITRIDE DEPOSITION FOR A SEMICONDUCTOR DEVICE
#4 | 2011-01-06Process of forming an electronic device including insulating layers having different strains
#5 | 2009-09-03Fabrication of a semiconductor device with stressor
#6 | 2009-06-04Method of forming a via
#7 | 2009-01-15Disposable organic spacers
#8 | 2008-12-04Method of making a semiconductor device with embedded stressor
#9 | 2008-12-04Electronic device including a transistor structure having an active region adjacent to a stressor layer
#10 | 2008-11-27SEMICONDUCTOR DEVICE WITH STRESSORS AND METHODS THEREOF
#11 | 2008-11-06Method of forming a semiconductor device with multiple tensile stressor layers
#12 | 2008-07-31Electronic device including insulating layers having different strains
#13 | 2008-07-24Multilayer silicon nitride deposition for a semiconductor device
#14 | 2008-07-24Multilayer silicon nitride deposition for a semiconductor device
#15 | 2008-07-10Anneal of epitaxial layer in a semiconductor device
#16 | 2008-06-26Semiconductor device including an active region and two layers having different stress characteristics
#17 | 2008-01-31METHOD FOR FORMING A STRESSOR LAYER
#18 | 2007-10-25Stressor integration and method thereof
#19 | 2007-09-20Undoped gate poly integration for improved gate patterning and cobalt silicide extendibility
#20 | 2007-08-30Semiconductor process integrating source/drain stressors and interlevel dielectric layer stressors
#21 | 2007-08-23Method for improving self-aligned silicide extendibility with spacer recess using a stand-alone recess etch integration
#22 | 2007-06-14Semiconductor device having stressors and method for forming
#23 | 2007-05-10Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device
#24 | 2007-04-26Process for forming an electronic device including transistor structures with sidewall spacers
#25 | 2006-12-14Method of forming an interlayer dielectric
#26 | 2006-10-05Method of forming an electronic device
#27 | 2006-08-31Method of making a nitrided gate dielectric
#28 | 2006-04-20Differentially nitrided gate dielectrics in CMOS fabrication process
#29 | 2005-07-21Transistor sidewall spacer stress modulation
#30 | 2005-07-21Integrated circuit device and method therefor
#31 | 2005-03-08Semiconductor fabrication process using transistor spacers of differing widths
#32 | 2005-01-27Transistor sidewall spacer stress modulation
#33 | 2005-01-25Integrated circuit device and method therefor
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