Inventor profile of:

Paul A. Grudowski

City:

Austin, Texas

Country:

United States

Published Applications:

33

Last publication date:

2014-09-11

Top Assignees for applications by Paul A. Grudowski

The entities that hold a legal rights for patent applications filed by inventor Grudowski Paul A.:

Recent patent applications by Grudowski Paul A.

Paul A. Grudowski from Austin, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2014-09-11
US20140252487A1
Electricity

Gate security feature

#2 | 2014-02-27
US20140054704A1
Electricity

Semiconductor device including an active region and two layers having different stress characteristics

#3 | 2011-09-01
US20110210401A1
Electricity

MULTILAYER SILICON NITRIDE DEPOSITION FOR A SEMICONDUCTOR DEVICE

#4 | 2011-01-06
US20110003444A1
Electricity

Process of forming an electronic device including insulating layers having different strains

#5 | 2009-09-03
US20090221119A1
Electricity

Fabrication of a semiconductor device with stressor

#6 | 2009-06-04
US20090142895A1
Electricity

Method of forming a via

#7 | 2009-01-15
US20090017587A1
Electricity

Disposable organic spacers

#8 | 2008-12-04
US20080299724A1
Electricity

Method of making a semiconductor device with embedded stressor

#9 | 2008-12-04
US20080296633A1
Electricity

Electronic device including a transistor structure having an active region adjacent to a stressor layer

#10 | 2008-11-27
US20080293192A1
Electricity

SEMICONDUCTOR DEVICE WITH STRESSORS AND METHODS THEREOF

#11 | 2008-11-06
US20080272411A1
Electricity

Method of forming a semiconductor device with multiple tensile stressor layers

#12 | 2008-07-31
US20080179679A1
Electricity

Electronic device including insulating layers having different strains

#13 | 2008-07-24
US20080173986A1
Electricity

Multilayer silicon nitride deposition for a semiconductor device

#14 | 2008-07-24
US20080173908A1
Electricity

Multilayer silicon nitride deposition for a semiconductor device

#15 | 2008-07-10
US20080163813A1
Electricity

Anneal of epitaxial layer in a semiconductor device

#16 | 2008-06-26
US20080150072A1
Electricity

Semiconductor device including an active region and two layers having different stress characteristics

#17 | 2008-01-31
US20080026517A1
Electricity

METHOD FOR FORMING A STRESSOR LAYER

#18 | 2007-10-25
US20070249113A1
Electricity

Stressor integration and method thereof

#19 | 2007-09-20
US20070218661A1
Electricity

Undoped gate poly integration for improved gate patterning and cobalt silicide extendibility

#20 | 2007-08-30
US20070202651A1
Electricity

Semiconductor process integrating source/drain stressors and interlevel dielectric layer stressors

#21 | 2007-08-23
US20070197011A1
Electricity

Method for improving self-aligned silicide extendibility with spacer recess using a stand-alone recess etch integration

#22 | 2007-06-14
US20070132031A1
Electricity

Semiconductor device having stressors and method for forming

#23 | 2007-05-10
US20070102755A1
Electricity

Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device

#24 | 2007-04-26
US20070090455A1
Electricity

Process for forming an electronic device including transistor structures with sidewall spacers

#25 | 2006-12-14
US20060281240A1
Electricity

Method of forming an interlayer dielectric

#26 | 2006-10-05
US20060223266A1
Electricity

Method of forming an electronic device

#27 | 2006-08-31
US20060194423A1
Electricity

Method of making a nitrided gate dielectric

#28 | 2006-04-20
US20060084220A1
Electricity

Differentially nitrided gate dielectrics in CMOS fabrication process

#29 | 2005-07-21
US20050156237A1
Electricity

Transistor sidewall spacer stress modulation

#30 | 2005-07-21
US20050156229A1
Electricity

Integrated circuit device and method therefor

#31 | 2005-03-08
US10285374
-

Semiconductor fabrication process using transistor spacers of differing widths

#32 | 2005-01-27
US20050020022A1
Electricity

Transistor sidewall spacer stress modulation

#33 | 2005-01-25
US10737116
-

Integrated circuit device and method therefor

InventorID:

663113 ⎘