Dresden
Germany
8
2025-06-10
The entities that hold a legal rights for patent applications filed by inventor Langdon Steven:
Steven Langdon from Dresden, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
Structures for a field-effect transistor that include a spacer structure
#2 | 2015-08-13Reduced threshold voltage-width dependency in transistors comprising high-K metal gate electrode structures
#3 | 2013-02-28Semiconductor device with work function adjusting layer having varied thickness in a gate width direction and methods of making same
#4 | 2013-01-31Methods for fabricating integrated circuits using non-oxidizing resist removal
#5 | 2012-08-02Drive current increase in field effect transistors by asymmetric concentration profile of alloy species of a channel semiconductor alloy
#6 | 2012-06-21Low-diffusion drain and source regions in CMOS transistors for low power/high performance applications
#7 | 2012-03-01Reduced threshold voltage-width dependency in transistors comprising high-k metal gate electrode structures
#8 | 2012-03-01Polysilicon Resistors Formed in a Semiconductor Device Comprising High-K Metal Gate Electrode Structures
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