Inventor profile of:

Matthias Bauer

City:

Phoenix, Arizona

Country:

United States

Published Applications:

22

Last publication date:

2014-07-31

Top Assignees for applications by Matthias Bauer

The entities that hold a legal rights for patent applications filed by inventor Bauer Matthias:

Recent patent applications by Bauer Matthias

Matthias Bauer from Phoenix, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2014-07-31
US20140209177A1
Electricity

Methods and apparatus for a gas panel with constant gas flow

#2 | 2013-01-31
US20130029496A1
Electricity

Methods and apparatus for a gas panel with constant gas flow

#3 | 2012-11-22
US20120295427A1
Electricity

High throughput cyclical epitaxial deposition and etch process

#4 | 2012-09-27
US20120244688A1
Electricity

Selective epitaxial formation of semiconductive films

#5 | 2011-05-19
US20110117732A1
Electricity

Cyclical epitaxial deposition and etch

#6 | 2010-06-10
US20100140744A1
Electricity

Structure comprises an As-deposited doped single crystalline Si-containing film

#7 | 2010-04-15
US20100093159A1
Chemistry; metallurgy

Separate injection of reactive species in selective formation of films

#8 | 2009-07-30
US20090189185A1
Chemistry; metallurgy

Epitaxial growth of relaxed silicon germanium layers

#9 | 2009-06-25
US20090163001A1
Chemistry; metallurgy

Separate injection of reactive species in selective formation of films

#10 | 2009-04-30
US20090111246A1
Chemistry; metallurgy

Inhibitors for selective deposition of silicon containing films

#11 | 2009-01-29
US20090026496A1
Electricity

Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition

#12 | 2008-01-31
US20080026149A1
Electricity

METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES

#13 | 2008-01-17
US20080014721A1
Electricity

Dual channel heterostructure

#14 | 2007-12-13
US20070287272A1
Electricity

Selective epitaxial formation of semiconductor films

#15 | 2007-11-15
US20070262296A1
Electricity

Photodetectors employing germanium layers

#16 | 2007-07-12
US20070161216A1
Chemistry; metallurgy

Epitaxial deposition of doped semiconductor materials

#17 | 2007-07-05
US20070155138A1
Electricity

Apparatus and method for depositing silicon germanium films

#18 | 2007-02-22
US20070042572A1
Electricity

Deposition of silicon germanium on silicon-on-insulator structures and bulk substrates

#19 | 2006-10-26
US20060240630A1
Electricity

Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition

#20 | 2006-10-19
US20060234504A1
Electricity

Selective deposition of silicon-containing films

#21 | 2006-09-14
US20060205194A1
Electricity

Methods of depositing electrically active doped crystalline Si-containing films

#22 | 2005-03-10
US20050054175A1
Electricity

Deposition of silicon germanium on silicon-on-insulator structures and bulk substrates

InventorID:

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