Niigata-ken
Japan
56
2025-05-29
The entities that hold a legal rights for patent applications filed by inventor UMETSU Eiji:
Eiji UMETSU from Niigata-ken, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
MAGNETIC SENSOR
#2 | 2025-05-22MAGNETIC SENSOR AND MAGNETIC MEASUREMENT METHOD
#3 | 2024-12-05MAGNETIC SENSOR
#4 | 2018-09-27Magnetic detection device including a bridge circuit and magnetoresistive elements provided on inclined surfaces of substrate recesses
#5 | 2017-10-12Sensor device
#6 | 2017-10-12Sensor device
#7 | 2015-08-27Load detector and electronic unit using the same
#8 | 2015-07-09Magnetic sensor
#9 | 2015-06-11Input device and control method using input device
#10 | 2015-06-11INPUT DEVICE AND METHOD OF DETECTING LOAD AT PLURALITY OF POINTS USING INPUT DEVICE
#11 | 2014-03-06Input device and method for detecting loads on multiple points using the input device
#12 | 2012-09-20Force sensor and method of manufacturing the same
#13 | 2009-12-24CPP GMR head with antiferromagnetic layer disposed at rear of ferrimagnetic pinned layer
#14 | 2009-10-06Self-pinned CPP giant magnetoresistive head with antiferromagnetic film absent from current path
#15 | 2009-02-12TUNNELING MAGNETIC SENSING ELEMENT AND METHOD FOR MAKING THE SAME
#16 | 2008-07-24TUNNEL TYPE MAGNETIC SENSOR HAVING FIXED MAGNETIC LAYER OF COMPOSITE STRUCTURE CONTAINING CoFeB FILM, AND METHOD FOR MANUFACTURING THE SAME
#17 | 2008-06-26MAGNETORESISTIVE ELEMENT
#18 | 2008-06-19SPIN-VALVE ELEMENT HAVING FIXED LAYER CONTAINING NANO-OXIDE LAYER
#19 | 2008-04-17Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film
#20 | 2008-03-27Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor
#21 | 2008-03-20EXCHANGE-COUPLED FILM, METHOD FOR MAKING EXCHANGE-COUPLED FILM, AND MAGNETIC SENSING ELEMENT INCLUDING EXCHANGE-COUPLED FILM
#22 | 2008-01-31Magnetic sensor including bridge circuit having fixed resistance like structure of element
#23 | 2007-10-16Magnetic detecting element
#24 | 2007-07-19Tunnel-type magnetic detecting device having laminated seed layer
#25 | 2007-07-19MAGNETIC DETECTING DEVICE HAVING LAMINATED SEED LAYER
#26 | 2007-06-07MAGNETIC DETECTING DEVICE HAVING TWO-LAYERED SEED
#27 | 2007-05-22CPP giant magnetoresistive head having antiferromagnetic film disposed in rear of element
#28 | 2007-05-01Magnetic sensing element including a pair of antiferromagnetic layers separated by spacer section in track width direction and method for fabricating same
#29 | 2006-11-23Magnetic detection element and manufacturing the same
#30 | 2006-10-24Spin valve magnetoresistive element having pinned magnetic layer composed of epitaxial laminated film having magnetic sublayers and nanomagnetic interlayer
#31 | 2006-09-12Magnetic sensor with second antiferromagnetic layer having smaller depth in height direction than free layer
#32 | 2006-09-05Thin-film electrode layer including β-ta and thin-film magnetic head using the same
#33 | 2006-07-11Magnetic sensing element with free layer biasing using varying thickness nonmagnetic coupling layer
#34 | 2006-05-11Exchange-coupled film including pinned magnetic layer composed of a plurality of cobalt-iron alloys having different compositions disposed on antiferromagnetic layer, and magnetic sensing element
#35 | 2006-04-18Magnetic sensor having free layer additionally provided with magnetic anisotropy by shape anisotropy
#36 | 2006-04-13Magnetic detector including antiferromagnetic layer, amorphous barrier layer, base layer, and hard layer arranged in that order and method for manufacturing magnetic detector
#37 | 2006-03-07Magnetic detecting element having second antiferromagnetic layer overlying second free magnetic layer extending in track width direction beyond track width
#38 | 2006-02-28Magnetic detecting element
#39 | 2006-02-21Magnetic sensing element biased by two antiferromagnetic layers above free magnetic layer and two hard bias layers at two sides of the free magnetic layer, and method for making the same
#40 | 2006-02-07Magnetic sensing element comprising antiferromagnetic layer laminated on free magnetic layer
#41 | 2005-12-27GMR magnetic sensing element provided with second free layer extended to outside of track width and method for manufacturing the same
#42 | 2005-12-22Magnetic detecting element having a self-pinned layer
#43 | 2005-12-22Magnetic sensing device with multilayered pinned magnetic layer having magnetostriction-enhancing layer
#44 | 2005-12-22Self-pinned magnetic detecting element
#45 | 2005-12-15Magnetic detecting element having antiferromagnetic film having predetermined space in track width direction and method for manufacturing the same
#46 | 2005-09-22Magnetic sensing element comprising a pinned magnetic layer, a free magnetic layer, and a nonmagnetic conductive layer disposed therebetween
#47 | 2005-07-26Magnetic sensing element including second free magnetic layer extending wider than track width and method for fabricating same
#48 | 2005-07-21Spin-valve element having fixed layer containing nano-oxide layer
#49 | 2005-05-17Magnetic sensing element with improved sensitivity and method for making the same
#50 | 2005-04-26Magnetic sensing element having chromium layer between antiferromagnetic layers
#51 | 2005-04-07Magnetic head comprising magnetic domain control layer formed on ABS-side of magnetic flux guide for GMR element and method of manufacturing the magnetic head
#52 | 2005-03-31Magnetic sensor having antiferromagnetic layers and free magnetic layer and method for manufacturing magnetic sensor
#53 | 2005-03-22Spin valve magnetoresistive head having a free layer contacted at each end by a ferromagnetic layer of a bias layer
#54 | 2005-02-15Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers
#55 | 2005-02-03Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film
#56 | 2005-01-27Spin-valve magnetoresistive element having fixed magnetic layer of epitaxal laminate including magnetic layer and nonmagnetic layer
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