Inventor profile of:

Philipp SCHUH

City:

Nürnberg

Country:

Germany

Published Applications:

13

Last publication date:

2025-10-09

Recent patent applications by SCHUH Philipp

Philipp SCHUH from Nürnberg, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-10-09
US20250313990A1
Chemistry; metallurgy

Layered Substrate, Method of Fabrication of a Layered Substrate and Method for Growing an Epitaxial Layer with the Layered Substrate

#2 | 2025-10-09
US20250313988A1
Chemistry; metallurgy

Multilayer Seed for Single-Crystal Growth, Method of Producing a Multilayer Seed, Use of the Multilayer Seed in a PVT Process for Growing a Single-Crystal and PVT Process Using the Same

#3 | 2025-10-09
US20250313987A1
Chemistry; metallurgy

Layered Seed, Method of Fabrication of a Layered Seed and Method for Growing a Volume Mono Crystal with the Layered Seed

#4 | 2025-09-11
US20250283247A1
Chemistry; metallurgy

SEED UNIT AND APPARATUS FOR GROWING A BULK SIC SINGLE CRYSTAL

#5 | 2025-09-11
US20250283246A1
Chemistry; metallurgy

PRODUCTION METHOD FOR A BULK SIC SINGLE CRYSTAL

#6 | 2025-06-19
US20250198048A1
Chemistry; metallurgy

ARRANGEMENT FOR GROWING A SIC VOLUME MONOCRYSTAL AND GROWING METHOD

#7 | 2025-06-19
US20250198046A1
Chemistry; metallurgy

CRUCIBLE FOR PRODUCING A SIC VOLUME MONO CRYSTAL AND A METHOD FOR GROWING A SIC VOLUME MONO CRYSTAL

#8 | 2024-11-28
US20240392471A1
Chemistry; metallurgy

Method for Producing a Bulk SiC Single Crystal with Improved Quality Using a SiC Seed Crystal with a Temporary Protective Oxide Layer, and SiC Seed Crystal with Protective Oxide Layer

#9 | 2024-09-26
US20240318352A1
Chemistry; metallurgy

METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE SIC VOLUME MONOCRYSTAL

#10 | 2024-09-19
US20240309546A1
Chemistry; metallurgy

Sublimation System And Method Of Growing At Least One Single Crystal

#11 | 2024-09-19
US20240309545A1
Chemistry; metallurgy

Sublimation System and Method of Growing at Least One Single Crystal of a Semiconductor Material

#12 | 2024-08-08
US20240263347A1
Chemistry; metallurgy

SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTAL, AND METHOD OF MANUFACTURING SAME

#13 | 2024-08-08
US20240263346A1
Chemistry; metallurgy

SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTAL, AND METHOD OF MANUFACTURING SAME

InventorID:

6742871