Sinzing
Germany
33
2026-01-15
The entities that hold a legal rights for patent applications filed by inventor Lugauer Hans-Jürgen:
Hans-Jürgen Lugauer from Sinzing, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
OPTOELECTRONIC SEMICONDUCTOR DEVICE COMPRISING AN EPITAXIALLY GROWN LAYER AND A METHOD OF MANUFACTURING THE OPTOELECTRONIC SEMICONDUCTOR DEVICE
#2 | 2025-10-16METHOD FOR PRODUCING A SEMICONDUCTOR CHIP AND SEMICONDUCTOR CHIP
#3 | 2025-07-03METHOD FOR PRODUCING A GROWTH SUBSTRATE, GROWTH SUBSTRATE AND RADIATION-EMITTING SEMICONDUCTOR CHIP
#4 | 2025-02-06LASER DIODE COMPONENT
#5 | 2024-11-21METHOD FOR PRODUCING A GROWTH SUBSTRATE, GROWTH SUBSTRATE, AND METHOD FOR PRODUCING A PLURALITY OF OPTOELECTRONIC SEMICONDUCTOR CHIPS
#6 | 2024-07-11METHOD FOR PRODUCING A GROWTH SUBSTRATE AND GROWTH SUBSTRATE
#7 | 2021-09-16Optoelectronic semiconductor component having a semiconductor contact layer and method for producing the optoelectronic semiconductor component
#8 | 2021-09-02Phase-coupled laser assembly and method for producing a phase-coupled laser assembly
#9 | 2020-01-23Optoelectronic semiconductor chip and method of manufacturing the same
#10 | 2016-08-25Producing a light-emitting semiconductor component by connecting first and second semiconductor bodies
#11 | 2016-01-14Optoelectronic component and method for producing same
#12 | 2016-01-07Method for producing an optoelectronic component
#13 | 2015-12-31Method of producing optoelectronic components having complex shapes
#14 | 2014-03-13Producing a light-emitting semiconductor component by connecting first and second semiconductor bodies
#15 | 2012-12-13Optoelectronic semiconductor chip and use of an intermediate layer based on AlGaN
#16 | 2011-11-17Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
#17 | 2011-09-08Method of producing a radiation-emitting thin film component and radiation-emitting thin film component
#18 | 2011-07-21Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same
#19 | 2010-01-05Radiation-emitting semiconductor component based on gallium nitride, and method for fabricating the semiconductor component
#20 | 2008-09-16Method for depositing a material on a substrate wafer
#21 | 2008-01-15Light emitting-diode chip and a method for producing same
#22 | 2007-11-13Method for fabricating a plurality of semiconductor bodies, and electronic semiconductor body
#23 | 2007-09-04Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same
#24 | 2007-01-18GaN-based light emitting-diode chip and a method for producing same
#25 | 2006-12-28Optical semiconductor device with multiple quantum well structure
#26 | 2006-07-27Lighting module and method for the production thereof
#27 | 2006-01-19Radiation-emitting semiconductor element and method for producing the same
#28 | 2005-12-22Radiation-emitting semiconductor element and method for producing the same
#29 | 2005-06-02Optical semiconductor device with multiple quantum well structure
#30 | 2005-05-19Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor
#31 | 2005-04-12Radiation-emitting semiconductor element and method for producing the same
#32 | 2005-02-24Ohmic contact structure and method for the production of the same
#33 | 2005-02-01Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor, and radiation-emitting semiconductor chip
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